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BUK7E5R2-100E,127

Part No BUK7E5R2-100E,127
Manufacturer NXP / Nexperia
Catalog Transistors - FETs, MOSFETs - RF
Description NEXPERIA BUK7E5R2-100E - 120A, 1  /  N-Channel 100 V 120A (Tc) 349W (Tc) Through Hole I2PAK
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Rohs State Need to verify
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Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr NXP Semiconductors
Series Automotive, AEC-Q101, TrenchMOS™
Package Bulk
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V
Current - Continuous Drain (Id) @ 25°C 120A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 5.2mOhm @ 25A, 10V
Vgs(th) (Max) @ Id 4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 180 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 11810 pF @ 25 V
Power Dissipation (Max) 349W (Tc)
Temperature Range - Operating -55°C ~ 175°C (TJ)
Mounting Type Through Hole
Supplier Device Package I2PAK
Package / Case TO-262-3 Long Leads, I²Pak, TO-262AA
MSL Level Vendor Undefined
REACH Status REACH Unaffected
HTSUS 0000.00.0000
Other Names 2156-BUK7E5R2-100E,127-954
Standard Package 1
Win Source Part Number 993921-BUK7E5R2-100E,127
Ultra Librarian 3D Model Ultra Librarian BUK7E5R2-100E,127 CAD Model

Description

The BUK7E5R2-100E,127 is a cutting-edge power MOSFET manufactured by NXP Semiconductors, a leader in the semiconductor industry. This high-performance product is designed to meet the rigorous demands of modern electronic applications, providing efficient power management and switching capabilities.

Key Features

  • Low On-State Resistance: Equipped with TrenchMOS technology, the BUK7E5R2-100E,127 boasts an exceptionally low on-state resistance (R<sub>DS(on)), which enhances its efficiency and reduces power losses during operation.
  • High-Speed Switching: This power MOSFET supports high-speed switching, making it an ideal choice for applications that require fast and reliable performance, such as switch-mode power supplies and DC-DC converters.
  • High Thermal Performance: The device's superior thermal characteristics ensure it operates reliably even under high temperature conditions, which is crucial for maintaining performance and extending product life.
  • Enhanced Durability: With its robust design and high-quality construction, the BUK7E5R2-100E,127 is built to withstand the stresses of continuous operation, contributing to its long-term reliability.

Applications

The versatility of the BUK7E5R2-100E,127 MOSFET makes it suitable for a wide range of applications, including:

  • Automotive systems
  • Power management modules
  • DC-DC converters
  • Motor drives
  • LED lighting solutions

Product Specifications

Parameter Value Drain-Source Voltage (V<sub>DS) 100 V Continuous Drain Current (I<sub>D) 75 A Power Dissipation (P<sub>D) 110 W Operating Temperature Range -55°C to +175°C

For designers and engineers looking for a reliable power MOSFET with superior performance, the BUK7E5R2-100E,127 from NXP Semiconductors is an excellent choice. Its advanced features and robust design ensure it delivers the performance required for today's high-demand electronic devices.

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