The BUK7E5R2-100E,127 is a cutting-edge power MOSFET manufactured by NXP Semiconductors, a leader in the semiconductor industry. This high-performance product is designed to meet the rigorous demands of modern electronic applications, providing efficient power management and switching capabilities.
Key Features
- Low On-State Resistance: Equipped with TrenchMOS technology, the BUK7E5R2-100E,127 boasts an exceptionally low on-state resistance (R<sub>DS(on)), which enhances its efficiency and reduces power losses during operation.
- High-Speed Switching: This power MOSFET supports high-speed switching, making it an ideal choice for applications that require fast and reliable performance, such as switch-mode power supplies and DC-DC converters.
- High Thermal Performance: The device's superior thermal characteristics ensure it operates reliably even under high temperature conditions, which is crucial for maintaining performance and extending product life.
- Enhanced Durability: With its robust design and high-quality construction, the BUK7E5R2-100E,127 is built to withstand the stresses of continuous operation, contributing to its long-term reliability.
Applications
The versatility of the BUK7E5R2-100E,127 MOSFET makes it suitable for a wide range of applications, including:
- Automotive systems
- Power management modules
- DC-DC converters
- Motor drives
- LED lighting solutions
Product Specifications
Parameter
Value
Drain-Source Voltage (V<sub>DS)
100 V
Continuous Drain Current (I<sub>D)
75 A
Power Dissipation (P<sub>D)
110 W
Operating Temperature Range
-55°C to +175°C
For designers and engineers looking for a reliable power MOSFET with superior performance, the BUK7E5R2-100E,127 from NXP Semiconductors is an excellent choice. Its advanced features and robust design ensure it delivers the performance required for today's high-demand electronic devices.