The BUK7Y7R6-40E is a state-of-the-art Power MOSFET brought to you by NXP Semiconductors, a leader in the field of high-performance mixed-signal electronics. This product is designed to cater to a wide range of power management applications, providing efficient, reliable, and cost-effective solutions for switching and amplification needs.

Key Features

• Low On-State Resistance: The BUK7Y7R6-40E boasts an exceptionally low on-state resistance (R<sub>DS(on)), which translates to reduced conduction losses and improved overall efficiency in your application.
• High-Speed Switching: Engineered for high-speed switching, this MOSFET enables fast operation in power conversion systems, contributing to the performance and responsiveness of the end product.
• Enhanced Thermal Performance: With an optimized package design, the BUK7Y7R6-40E ensures superior thermal management, which is crucial for maintaining stability and longevity under high-power conditions.
• Robustness: NXP's commitment to quality means that this MOSFET is built to withstand harsh conditions, ensuring reliability even in the most demanding environments.

Applications

The versatility of the BUK7Y7R6-40E allows it to be used across various applications, including:

• DC/DC converters
• Motor drives
• Power management systems
• Automotive electronics
• Switched Mode Power Supplies (SMPS)

Technical Specifications

Parameter Value Drain-source voltage (V<sub>DS) 40V Continuous drain current (I<sub>D) 100A Power dissipation (P<sub>D) 200W Operating temperature range -55°C to +175°C

With the BUK7Y7R6-40E, NXP continues to push the boundaries of power MOSFET technology, delivering products that enhance efficiency, reduce power losses, and offer superior performance in a wide array of electronic systems.