Overview of Product BUK961R4-30E,118 by NXP

The BUK961R4-30E,118 is a high-performance, N-channel TrenchMOS™ standard level field-effect transistor (FET) designed and manufactured by NXP Semiconductors. This power MOSFET is widely recognized for its efficiency and reliability in a variety of applications, making it a go-to component for engineers and designers looking for a robust power management solution.

Key Features

• Low On-State Resistance: The device features a very low on-state resistance (R<sub>DS(on)) of only 30 mΩ at V<sub>GS = 10 V, which translates into reduced conduction losses and improved overall efficiency in power conversion applications.
• High Continuous Drain Current: With a continuous drain current (I<sub>D) of 75 A, this MOSFET can handle high current loads, making it suitable for demanding power supply and switching applications.
• Standard Level Gate Drive: The transistor operates with standard level gate drive voltages, offering compatibility with a wide range of control circuits and ease of integration into existing designs.
• Robust Thermal Performance: The BUK961R4-30E,118 is encapsulated in a TO-220AB package, which provides excellent thermal performance and aids in maintaining device stability under high power operation.

Applications

The versatility of the BUK961R4-30E,118 MOSFET makes it suitable for a broad spectrum of applications, including:

• DC/DC converters and voltage regulators
• Motor drives and controllers
• Power management systems
• Automotive applications and load switches
• Switch mode power supplies (SMPS)

Quality and Reliability

NXP Semiconductors is known for its commitment to quality, and the BUK961R4-30E,118 is no exception. It is designed to meet rigorous industry standards, ensuring high reliability and performance even in harsh conditions. The device is RoHS compliant, which means it meets environmental standards by avoiding the use of certain hazardous substances in its construction.

Conclusion

In summary, the BUK961R4-30E,118 from NXP is a powerful and reliable component that offers efficiency and high performance for a wide range of power applications. Its low on-state resistance, high current capacity, and standard level gate drive make it an excellent choice for designers looking to optimize their power management systems.