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MMRF1008HSR5

Part No MMRF1008HSR5
Manufacturer NXP / Nexperia
Catalog Transistors - FETs, MOSFETs - RF
Description FET RF 100V 1.03GHZ NI-780S / RF Mosfet 50 V 100 mA 1.03GHz 20.3dB 275W NI-780S
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - RF FETs, MOSFETs
Mfr NXP USA Inc.
Package Tape & Reel
Product Status Obsolete
Technology LDMOS
Frequency 1.03GHz
Gain 20.3dB
Voltage - Test 50 V
Current - Test 100 mA
Power - Output 275W
Voltage - Rated 100 V
Mounting Type Chassis Mount
Package / Case NI-780S
Supplier Device Package NI-780S
Base Product Number MMRF1
Standard Package 50
MSL Level Not Applicable
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0075
Win Source Part Number 1345954-MMRF1008HSR5
Ultra Librarian 3D Model Ultra Librarian MMRF1008HSR5 CAD Model

Description

Introducing the MMRF1008HSR5 RF Power LDMOS Transistor

The MMRF1008HSR5 is a state-of-the-art RF power LDMOS transistor designed and manufactured by NXP Semiconductors. This high-performance transistor is specifically engineered for broadband commercial and industrial applications, offering outstanding efficiency and reliability. The MMRF1008HSR5 is a testament to NXP's commitment to providing innovative solutions for RF power amplification.

Key Features

  • Wide Frequency Range: The MMRF1008HSR5 is designed to operate over a broad frequency range, making it highly versatile for various applications, including broadcast, aerospace, and mobile radios.
  • High Power Output: With an impressive power output capability, this LDMOS transistor can deliver up to 1008 watts of continuous wave power, ensuring strong signal transmission and reception.
  • High Gain: The device provides high gain levels, which translates to improved signal strength and quality, enhancing overall system performance.
  • Excellent Thermal Performance: The MMRF1008HSR5 is built with advanced thermal management features, ensuring stable operation even under high-stress conditions.
  • Ruggedness: Engineered for durability, the transistor can withstand high voltage standing wave ratios (VSWRs), making it robust against mismatches in the transmission line.

Applications

The MMRF1008HSR5 is ideal for a wide range of applications, thanks to its broad frequency range and high power output. It is particularly well-suited for:

  • Industrial, scientific, and medical (ISM) applications
  • RF energy applications such as plasma generation, cooking, and heating
  • Commercial broadcast transmitters
  • Aerospace and defense systems
  • Land mobile radios

Product Specifications

With its excellent linearity and efficiency, the MMRF1008HSR5 is designed to maximize performance while minimizing energy consumption. It operates at a frequency range of 1.8 to 600 MHz, offering versatility for a variety of RF applications. The device is housed in a robust package that ensures reliable operation even in harsh environments.

Conclusion

The MMRF1008HSR5 from NXP Semiconductors is a powerful and reliable RF power LDMOS transistor that sets the standard for broadband applications. Its combination of high power, wide frequency range, and rugged design makes it a top choice for engineers looking to enhance their RF amplification systems.

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