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MMRF1019NR4

Part No MMRF1019NR4
Manufacturer NXP / Nexperia
Catalog Transistors - FETs, MOSFETs - RF
Description FET RF 100V 1.09GHZ PLD-1.5 / RF Mosfet 50 V 10 mA 1.09GHz 25dB 10W PLD-1.5
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - RF FETs, MOSFETs
Mfr NXP USA Inc.
Package Tape & Reel
Product Status Obsolete
Technology LDMOS
Frequency 1.09GHz
Gain 25dB
Voltage - Test 50 V
Current - Test 10 mA
Power - Output 10W
Voltage - Rated 100 V
Mounting Type Surface Mount
Package / Case PLD-1.5
Supplier Device Package PLD-1.5
Base Product Number MMRF1019
Standard Package 100
MSL Level 3 (168 Hours)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0075
Win Source Part Number 1345989-MMRF1019NR4
Ultra Librarian 3D Model Ultra Librarian MMRF1019NR4 CAD Model

Description

The MMRF1019NR4 is a state-of-the-art RF power LDMOS transistor developed by NXP Semiconductors, a leading provider of high-performance mixed-signal products. This robust transistor is specifically designed to meet the rigorous demands of high-power radio frequency applications, making it an ideal choice for broadcast, industrial, medical, and radio and TV broadcasting applications.

Key Features

  • High Efficiency: The MMRF1019NR4 offers exceptional efficiency, which is critical for reducing energy consumption and heat generation in high-power systems.
  • Wide Frequency Range: This transistor is capable of operating over a broad frequency range, providing versatility for various applications.
  • High Gain: With its high gain, the MMRF1019NR4 can amplify weak signals to higher power levels, ensuring clear and reliable communication.
  • Thermal Performance: The device is engineered with advanced thermal management features to withstand high-temperature environments and maintain performance stability.
  • Durability: Constructed with ruggedness in mind, it can endure the stress of high voltage standing wave ratio (VSWR) conditions without performance degradation.

Applications

The MMRF1019NR4 is well-suited for a variety of high-power RF applications, including:

  • Broadcast transmitters
  • Industrial heating and welding systems
  • Medical diagnostic and treatment equipment
  • RF energy applications
  • Radio and TV broadcasting

Technical Specifications

The MMRF1019NR4 boasts impressive technical specifications:

  • Operating Frequency: Designed to work effectively across a wide frequency range.
  • Power Output: Capable of delivering high power output, essential for demanding RF applications.
  • Efficiency: Optimized for maximum efficiency to ensure low operational costs and reduced thermal footprint.
  • Package: Housed in a robust package that facilitates easy integration into a wide array of system designs.

Quality and Reliability

NXP's commitment to quality and reliability is evident in the MMRF1019NR4. Each transistor is manufactured to meet the highest industry standards, ensuring long-term reliability and consistent performance for the most challenging applications.

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