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MMRF1315NR1

Part No MMRF1315NR1
Manufacturer NXP / Nexperia
Catalog Transistors - FETs, MOSFETs - RF
Description FET RF 66V 880MHZ TO270
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Features RF Mosfet LDMOS 28 V 450 mA 880MHz 21.1dB 14W TO-270-2
Manufacturer NXP
Package Reel - TR
Package TO-270-2
Case / Package TO-270-2
Family Name MMRF1
MSL Level 3 (168 Hours)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0075
Other Part Number MMRF1315NR1CT, 2832-MMRF1315NR1, MMRF1315NR1TR-ND, MMRF1315NR1-ND, MMRF1315NR1TR, 935323557528, MMRF1315NR1DKR
Quantity per package 500
Popularity Medium
Supply and Demand Status Limited
Win Source Part Number 885405-MMRF1315NR1
Ultra Librarian 3D Model Ultra Librarian MMRF1315NR1 CAD Model

Description

Introducing the MMRF1315NR1 RF Power Transistor from NXP

The MMRF1315NR1 is a robust RF power LDMOS transistor designed by NXP Semiconductors, a leader in the field of high-performance mixed-signal electronics. This device is specifically engineered for high-efficiency, broadband operation, making it an ideal choice for applications in broadcast transmitters, industrial, scientific, and medical (ISM) applications, as well as for aerospace and defense purposes.

Key Features

  • Frequency Range: The MMRF1315NR1 operates effectively over a broad frequency range, making it versatile for various applications.
  • High Output Power: It delivers an impressive output power, which ensures strong signal transmission capabilities.
  • High Gain: With its high gain performance, the MMRF1315NR1 ensures amplified signal strength for clear and reliable communication.
  • Efficiency: The device is designed for high efficiency, which translates to better energy usage and reduced thermal footprints, making it environmentally friendly and cost-effective.
  • Thermal Performance: Excellent thermal performance is guaranteed, thanks to its advanced design, which helps to maintain stability and prolong the lifespan of the device.
  • Ruggedness: The MMRF1315NR1 is built to withstand harsh conditions, ensuring reliable operation even in challenging environments.

Design and Application

The MMRF1315NR1 is housed in a compact, over-molded plastic package that is both lightweight and durable. Its design is optimized for ease of integration into a wide range of RF power amplifier circuits. The device's broadband capabilities make it particularly well-suited for FM broadcast applications, where consistent performance across various frequencies is critical.

Moreover, its ruggedness and reliability under extreme conditions make it an excellent choice for aerospace and defense applications where equipment is expected to perform without fail. In the industrial sector, the MMRF1315NR1 can be utilized in RF heating and plasma generation, contributing to efficient manufacturing processes and scientific research.

With its combination of performance, efficiency, and durability, the MMRF1315NR1 from NXP stands out as a top-tier component for any RF power amplification needs. Its adaptability to a range of frequencies and applications ensures that it will continue to be a valuable asset in the advancement of communication and industrial technologies.

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