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MMRF2007NR1

Part No MMRF2007NR1
Manufacturer NXP / Nexperia
Catalog Transistors - FETs, MOSFETs - RF
Description FET RF 2CH 70V 940MHZ / RF Mosfet 28 V 60 mA 940MHz 32.6dB 35W TO-270 WBL-16
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Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - RF FETs, MOSFETs
Mfr NXP USA Inc.
Package Tape & Reel
Product Status Obsolete
Technology LDMOS
Frequency 940MHz
Gain 32.6dB
Voltage - Test 28 V
Current - Test 60 mA
Power - Output 35W
Voltage - Rated 70 V
Mounting Type Surface Mount
Package / Case TO-270-16 Variant, Flat Leads
Supplier Device Package TO-270 WBL-16
Base Product Number MMRF2
Standard Package 500
MSL Level 3 (168 Hours)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0075
Win Source Part Number 1345985-MMRF2007NR1
Ultra Librarian 3D Model Ultra Librarian MMRF2007NR1 CAD Model

Description

Product Overview: MMRF2007NR1

The MMRF2007NR1 is a state-of-the-art RF power LDMOS transistor designed and manufactured by NXP Semiconductors. This high-performance component is specifically engineered for broadband commercial and industrial applications with frequencies ranging up to 2000 MHz. With its exceptional versatility, it is an ideal choice for a wide array of RF energy applications including but not limited to broadcast transmitters, industrial, scientific, and medical (ISM) applications, as well as RF plasma lighting.

Key Features

  • Wide Frequency Range: The MMRF2007NR1 operates efficiently over a broad frequency spectrum, making it suitable for various communication and industrial applications.
  • High Power Output: It delivers a high output power of 75 W CW, ensuring robust performance for demanding applications.
  • High Gain: With a high gain of 18.4 dB, this transistor amplifies RF signals effectively, improving the overall efficiency of the system.
  • Excellent Thermal Stability: The device is designed to maintain stable performance over a wide temperature range, ensuring reliability in various operating conditions.
  • Integrated ESD Protection: The MMRF2007NR1 includes built-in electrostatic discharge protection, which safeguards the device from unexpected voltage spikes.

Applications

The MMRF2007NR1 is well-suited for a multitude of applications where reliable and efficient RF power amplification is required. It is commonly used in broadcast transmitters for radio and television, providing the necessary power to ensure clear signal transmission. Additionally, its application in industrial heating, welding, and drying systems demonstrates its capability to handle high-power requirements in industrial environments. The medical sector also benefits from its use in MRI and RF ablation, where precision and reliability are paramount. Moreover, its role in RF plasma lighting showcases its adaptability in innovative lighting technologies.

Quality and Support

NXP Semiconductors is committed to delivering high-quality products. The MMRF2007NR1 is built with the highest standards to ensure performance and durability. Technical support and comprehensive documentation are available, providing customers with the necessary resources to integrate this RF power LDMOS transistor into their designs effectively.

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