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MRF281ZR1

Part No MRF281ZR1
Manufacturer NXP / Nexperia
Catalog Transistors - FETs, MOSFETs - RF
Description FET RF 65V 1.93GHZ NI-200Z / Trans RF MOSFET N-CH 65V 3-Pin NI-200Z T/R
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer NXP
Packaging Reel package
Part Status Obsolete(EOL)
Transistor Type LDMOS
Frequency 1.93GHz
Gain 12.5dB
Voltage - Test 26V
Current - Test 25mA
Power - Output 4W
Voltage Rating DC 65V
Package NI-200Z
Manufacturer Package NI-200Z
Win Source Part Number 789410-MRF281ZR1
Popularity Medium
Supply and Demand Status Limited
Family Name MRF281Z
Introduction Date April 14, 2000
ECCN EAR99
Halogen Free Compliant
Estimated EOL Date Obsolete / End of life
Ultra Librarian 3D Model Ultra Librarian MRF281ZR1 CAD Model

Description

Product Overview: MRF281ZR1 - NXP Semiconductors

The MRF281ZR1 is a high-performance RF power LDMOS transistor designed by NXP Semiconductors, tailored for a range of applications demanding high efficiency and reliability. This product is part of NXP's renowned RF power transistor lineup, which is widely recognized in the industry for pushing the boundaries of wireless communication technology.

Key Features

  • Frequency Range: The MRF281ZR1 operates at a frequency range that is ideal for various RF applications, ensuring versatility and broad compatibility with different systems.
  • Output Power: It delivers a high output power level, which is essential for applications that require strong signal transmission or amplification.
  • High Efficiency: The transistor is engineered to provide high efficiency, reducing power loss and improving the overall performance of the application it is used in.
  • Thermal Performance: With an excellent thermal performance profile, the MRF281ZR1 maintains stability and reliability even under high-temperature operating conditions.
  • Durability: Built with robust materials and technology, this product is designed to withstand the rigors of demanding operational environments.

Applications

The MRF281ZR1 is suitable for a wide array of applications, including but not limited to:

  • Commercial and Consumer RF Power Amplifiers
  • Public Safety and Professional Communications
  • Cellular Infrastructure: Base Stations, Repeaters, and Boosters
  • Industrial, Scientific, and Medical (ISM) Applications
  • Aerospace and Defense Systems

Product Specifications

NXP's MRF281ZR1 is built to meet stringent specifications, providing reliable and consistent performance. It is encapsulated in a robust package that ensures protection against environmental factors and facilitates easy integration into various systems. For detailed technical specifications, designers and engineers are encouraged to consult the official datasheet provided by NXP Semiconductors.

With its combination of power, efficiency, and durability, the MRF281ZR1 represents NXP's commitment to innovation and excellence in the field of RF power transistors. It is a testament to the company's expertise in providing solutions that meet the evolving needs of the wireless communications industry.

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