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MRF5P21240HR5

Part No MRF5P21240HR5
Manufacturer NXP / Nexperia
Catalog Transistors - FETs, MOSFETs - RF
Description FET RF 65V 2.17GHZ NI-1230 / Trans RF MOSFET N-CH 65V 5-Pin NI-1230 T/R
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Rohs State rohs
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Categories Discrete Semiconductor Products
Manufacturer NXP
Packaging Reel package
Part Status Obsolete(EOL)
Transistor Type LDMOS
Frequency 2.11GHz ~ 2.17GHz
Gain 13dB
Voltage - Test 28V
Current - Test 2.2A
Power - Output 52W
Voltage Rating DC 65V
Package NI-1230
Manufacturer Package NI-1230
Win Source Part Number 789426-MRF5P21240HR5
Popularity Medium
Supply and Demand Status Limited
Family Name MRF5P21240H
Introduction Date June 09, 2005
ECCN EAR99
Halogen Free Compliant
Estimated EOL Date Obsolete / End of life
Ultra Librarian 3D Model Ultra Librarian MRF5P21240HR5 CAD Model

Description

Introducing the MRF5P21240HR5 from NXP Semiconductors

The MRF5P21240HR5 is a cutting-edge RF power transistor designed by NXP Semiconductors, a global leader in the field of high-performance mixed-signal electronics. This device is specifically engineered to meet the rigorous demands of high-power applications, making it an ideal choice for a range of RF energy solutions.

Constructed with NXP's advanced LDMOS (Laterally Diffused Metal Oxide Semiconductor) technology, the MRF5P21240HR5 boasts exceptional performance characteristics. It operates within the 2.11-2.17 GHz frequency range, which is a sweet spot for many telecommunication and broadcasting services, including satellite communication systems.

Key Features of the MRF5P21240HR5

  • High Output Power: With the capability to deliver a powerful output of 240W CW, this transistor can easily handle high-power applications.
  • High Gain: The MRF5P21240HR5 offers a high gain of 16 dB, ensuring efficient signal amplification.
  • High Efficiency: Energy efficiency is a hallmark of this component, with a typical efficiency rating of 32%, reducing overall power consumption and heat dissipation.
  • Wideband Operation: Its design supports wideband operation, allowing for flexibility in a variety of RF applications.
  • Integrated ESD Protection: Electrostatic discharge (ESD) protection is built into the device, safeguarding it against unexpected voltage spikes and enhancing its durability.

The MRF5P21240HR5 is housed in a ceramic package that ensures robustness and reliability, even under strenuous conditions. The package is designed to optimize thermal performance, ensuring that the device remains stable and operates efficiently over its entire lifespan.

Applications for this RF power transistor are diverse and include, but are not limited to, broadcast transmitters, cellular base station amplifiers, industrial, scientific, and medical (ISM) applications, and RF heating for industrial processes. Its performance and reliability make it a go-to component for engineers and designers looking to push the boundaries of RF power amplification.

With the MRF5P21240HR5, NXP Semiconductors continues to demonstrate its commitment to providing innovative solutions that address the evolving needs of the high-power RF market. This product exemplifies their dedication to quality, performance, and customer satisfaction.

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