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MRF6V2150NBR1

Part No MRF6V2150NBR1
Manufacturer NXP / Nexperia
Catalog Transistors - FETs, MOSFETs - RF
Description FET RF 110V 220MHZ TO-272-4
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Features RF Mosfet LDMOS 50 V 450 mA 220MHz 25dB 150W TO-272 WB-4
Manufacturer NXP
Package Reel - TR
Part Status Obsolete
Package TO-272BB
Case / Package TO-272 WB-4
Family Name MRF6
MSL Level 3 (168 Hours)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.21.0075
Other Part Number 935316841528, MRF6V2150NBR1DKR, MRF6V2150NBR1CT, MRF6V2150NBR1TR, MRF6V2150NBR1-ND
Quantity per package 500
Popularity High
Supply and Demand Status Balance
Win Source Part Number 928079-MRF6V2150NBR1
Ultra Librarian 3D Model Ultra Librarian MRF6V2150NBR1 CAD Model

Description

Product Overview: MRF6V2150NBR1

The MRF6V2150NBR1 is a high-performance RF power transistor from NXP Semiconductors, designed for commercial, industrial, and military applications. This device is part of the NXP's RF power LDMOS transistor family and is particularly suited for broadband applications due to its wide frequency range.

Key Features

  • Frequency Range: The MRF6V2150NBR1 operates at a frequency range of 1.8-2.2 GHz, making it ideal for a variety of RF applications including but not limited to LTE, WCDMA, and other communication systems.
  • High Power: It is capable of delivering up to 150W of continuous wave power, ensuring robust performance for high-power requirements.
  • High Efficiency: The transistor is designed for high efficiency, which minimizes power loss and heat generation, thereby improving the overall performance of the system in which it is used.
  • Integrated ESD Protection: It comes with integrated electrostatic discharge (ESD) protection, enhancing its durability and reliability in various operating environments.
  • Thermal Performance: The device features advanced thermal performance, which is critical in maintaining stability and longevity under high-power operation.
  • Easy Integration: Its plastic overmolded package is designed for easy integration into a wide range of circuit designs, providing flexibility for system designers.

Applications

The MRF6V2150NBR1 is versatile and can be used in multiple applications, including but not limited to:

  • Broadband RF power amplifiers
  • Industrial, scientific, and medical (ISM) applications
  • Commercial and military radar systems
  • RF energy applications
  • Professional mobile radio

Conclusion

In conclusion, the MRF6V2150NBR1 from NXP Semiconductors is a robust and efficient solution for designers looking to incorporate a high-power, broadband RF power transistor into their systems. Its wide frequency range, high power output, and integrated features such as ESD protection and advanced thermal management make it an excellent choice for a variety of demanding applications.

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Pricing & Ordering

Quantity Unit Price Ext. Price
1+ $174.4361 $174.4361
2+ $156.3910 $312.7820
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Availability: 49 pieces
Order Increment : 1 pcs
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