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MRF8VP13350NR3

Part No MRF8VP13350NR3
Manufacturer NXP / Nexperia
Catalog Transistors - FETs, MOSFETs - RF
Description TRANS RF LDMOS 350W 50V
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Manufacturer NXP USA Inc.
Packaging Reel
Transistor Type LDMOS (Dual)
Frequency 1.3GHz
Gain 19.2dB
Voltage - Test 50V
Current - Test 100mA
Power - Output 350W
Voltage - Rated 100V
Manufacturer Package OM780-4
Supplier Device Package OM780-4
Manufacturer Pack Quantity 250
MSL Level 3 (168 Hours)
Popularity Low
Supply and Demand Status Limited
Win Source Part Number 812684-MRF8VP13350NR3
Ultra Librarian 3D Model Ultra Librarian MRF8VP13350NR3 CAD Model

Description

Introducing the MRF8VP13350NR3 RF Power Transistor

The MRF8VP13350NR3 is a cutting-edge Radio Frequency (RF) power transistor developed by NXP Semiconductors, designed for a wide range of high-power applications. This device is a testament to NXP's commitment to providing industry-leading solutions for RF energy, especially in the fields of broadcast, industrial, scientific, and medical (ISM) applications.

Key Features

  • Frequency Range: The MRF8VP13350NR3 operates at a frequency range of 700 MHz to 1300 MHz, making it highly versatile for various high-frequency applications.
  • Power Output: With an impressive output power of 350 W CW, this transistor is capable of delivering the performance needed for demanding applications that require a high level of power.
  • High Efficiency: The device boasts a high efficiency of 50%, minimizing energy loss and ensuring optimal performance in power-sensitive environments.
  • Thermal Performance: Engineered with an excellent thermal performance in mind, the MRF8VP13350NR3 ensures reliability even under strenuous operating conditions.
  • Ruggedness: This transistor is designed to withstand a mismatched load VSWR of 10:1 through all phases, offering robustness and durability for a wide range of applications.
  • Integrated ESD Protection: The device includes integrated Electrostatic Discharge (ESD) protection, safeguarding against unexpected electrical spikes and enhancing its longevity.

Applications

The MRF8VP13350NR3 is ideal for a variety of applications that require high power and efficiency. Its capabilities make it suitable for use in FM broadcast transmitters, VHF television broadcast, industrial heating, plasma generation, and medical applications such as MRI and RF ablation. Its rugged design also makes it suitable for military and aerospace applications where reliability is paramount.

Product Quality and Support

NXP Semiconductors ensures that the MRF8VP13350NR3 is manufactured to the highest standards of quality and reliability. Customers can also access comprehensive technical support and documentation, ensuring that they can make the most out of this powerful RF component in their applications.

Whether you are developing a commercial broadcast system, an industrial heating solution, or a sophisticated medical device, the MRF8VP13350NR3 from NXP offers the performance and reliability needed to drive your project forward.

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