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MRFG35003N6T1

Part No MRFG35003N6T1
Manufacturer NXP / Nexperia
Catalog Transistors - FETs, MOSFETs - RF
Description FET RF 8V 3.55GHZ 1.5-PLD
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer NXP
Packaging Tape and Reel
Status Obsolete
Transistor Type pHEMT FET
Frequency 3.55GHz
Gain 9dB
Voltage - Test 6V
Current - Test 180mA
Power - Output 3W
Voltage - Rated 8V
Manufacturer Package PLD-1.5
Supplier Device Package PLD-1.5
Family Part Number MRFG35003
Manufacturer Pack Quantity 1,000
MSL Level 1 (Unlimited)
Win Source Part Number 732879-MRFG35003N6T1
Popularity Low
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian MRFG35003N6T1 CAD Model

Description

The MRFG35003N6T1 is a high-performance RF power transistor from NXP Semiconductors, designed to meet the demanding requirements of high-frequency applications. This device is part of NXP's MRFG series, which is renowned for its advanced LDMOS (Laterally Diffused Metal Oxide Semiconductor) technology, offering exceptional efficiency, gain, and thermal performance.

Key Features

  • Frequency Range: The transistor operates at a frequency range that makes it suitable for a variety of RF applications, including but not limited to, cellular base station amplifiers, broadcast transmitters, and industrial, scientific, and medical (ISM) applications.
  • High Power: With its robust power output, the MRFG35003N6T1 is capable of delivering significant RF power, which is essential for applications requiring high signal strength and long-range transmission capabilities.
  • High Efficiency: The device is engineered to achieve high efficiency, which minimizes power loss and heat generation, thus reducing the cooling requirements and improving the overall system reliability.
  • Thermal Performance: The transistor's superior thermal performance ensures stability and longevity even under strenuous operating conditions, making it a reliable choice for mission-critical systems.
  • Package: The MRFG35003N6T1 comes in a compact and rugged package that is designed to withstand harsh environments and is easy to integrate into a wide range of circuit designs.

Applications

The versatility of the MRFG35003N6T1 allows it to be used in a multitude of applications where high-frequency and high-power amplification is required. It is particularly well-suited for:

  • Cellular base station amplifiers for various communication standards
  • Broadcasting equipment for radio and television transmission
  • ISM band applications, including industrial heating and medical equipment
  • Aerospace and defense systems where reliability and performance are critical

Conclusion

The MRFG35003N6T1 from NXP Semiconductors is a testament to NXP's commitment to providing cutting-edge RF power solutions. Its combination of high power, efficiency, and thermal performance, packaged in a durable and practical form factor, makes it an excellent choice for designers looking to create robust and reliable high-frequency applications.

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