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NTBA104GU12,115

Part No NTBA104GU12,115
Manufacturer NXP / Nexperia
Catalog Logic - Translators, Level Shifters
Description IC TXRX TRANSLATING 4BIT 12XQFN
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Integrated Circuits
Manufacturer NXP
Packaging Reel - TR
Status Active
Translator Type Voltage Level
Channel Type Bidirectional
Number of Circuits 1
Channels per Circuit 4
Voltage - VCCA 1.2V to 3.6V
Voltage - VCCB 1.65V to 5.5V
Output Type Tri-State, Non-Inverted
Data Rate 80Mbps
Temperature Range - Operating -40°C to 125°C (TA)
Features Auto-Direction Sensing
Mounting SMD (SMT)
Case / Package 12-XQFN (2x1.7)
Win Source Part Number 1083731-NTBA104GU12,115
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian NTBA104GU12,115 CAD Model

Description

The NTBA104GU12,115 is a high-performance, dual N-channel TrenchMOS logic level FET from NXP Semiconductors, designed to deliver efficient power control and switching in a compact and versatile package. This advanced semiconductor device is ideal for a wide range of applications, including but not limited to, power management, load switching, and DC-DC converters in the automotive, industrial, and consumer electronics sectors.

Key Features

  • High Efficiency: Utilizes TrenchMOS technology to provide low on-state resistance (R<sub>DS(on)), which translates to reduced conduction losses and improved overall efficiency.
  • Logic Level Drive: Capable of being driven by logic level voltages, making it compatible with modern microcontrollers and digital circuits without the need for additional level-shifting components.
  • Thermal Performance: Offers excellent thermal characteristics due to its enhanced Silicon substrate, allowing for reliable operation even under high current conditions.
  • Dual N-Channel Configuration: Features two N-channel MOSFETs in one package, providing design flexibility and space savings for complex circuit designs.
  • Compact Package: Enclosed in a small and efficient SOT-363 (SC-88) surface-mount package, ensuring a minimal footprint on PCBs.

Applications

  • Power supply circuits
  • Motor control modules
  • LED lighting systems
  • Battery management systems
  • Automotive electronics
  • Portable electronic devices

Technical Specifications

The NTBA104GU12,115 boasts a continuous drain current (I<sub>D) of up to 3.1 A and a maximum drain-source voltage (V<sub>DSS) of 20 V. Its low threshold voltage (V<sub>GS(th)) ensures that it can be activated with minimal gate voltage, making it highly efficient for battery-operated devices. The device is RoHS compliant and is designed to meet the stringent quality and reliability standards expected from NXP Semiconductors.

Quality and Reliability

NXP Semiconductors is a trusted name in the industry, known for its commitment to quality and reliability. The NTBA104GU12,115 is manufactured with the highest standards, ensuring that each component performs to its specifications in a wide range of environmental conditions.

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