The PBRP113ZT,215 is a high-performance bipolar transistor from the renowned semiconductor manufacturer, NXP Semiconductors. This discrete device is a part of NXP's extensive range of transistors designed to cater to a wide array of electronic applications. The PBRP113ZT,215 is particularly well-suited for use in switching and amplification applications due to its excellent hFE linearity and high-speed switching capabilities.

Key Features

• Device Type: Bipolar (BJT) Single Transistor
• Configuration: Single PNP
• Collector-Emitter Voltage (VCEO): -50V
• Collector-Base Voltage (VCBO): -50V
• Emitter-Base Voltage (VEBO): -5V
• Collector Current (IC): -100mA
• Power Dissipation (Pd): 250mW
• DC Current Gain (hFE): High, ensuring efficient operation
• Transition Frequency (fT): High, for superior performance in high-speed switching applications
• Operating Temperature Range: -65°C to +150°C
• Mounting Type: Surface Mount
• Package / Case: SOT-23

Applications

The PBRP113ZT,215 transistor is ideal for a variety of electronic circuits where a robust and reliable PNP transistor is required. It is commonly used in:

• Signal processing
• Power management
• Switching regulators
• Audio amplifiers
• Driver stages in hi-fi amplifiers and television circuits

Quality and Reliability

NXP Semiconductors is known for its commitment to quality, and the PBRP113ZT,215 is no exception. This transistor is manufactured using state-of-the-art technology and is subjected to rigorous testing to ensure it meets the highest standards of performance and reliability.

Ordering Information

The PBRP113ZT,215 is available in a compact SOT-23 package, making it suitable for space-constrained applications. It is supplied in tape and reel packaging, facilitating efficient assembly processes for high-volume production. For detailed ordering and pricing information, please contact NXP Semiconductors or an authorized distributor.