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Same model may have multiple batches, images only for reference.
IPP147N12N3G Real Image
Same model may have multiple batches, images only for reference.

IPP147N12N3G

Part No IPP147N12N3G
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 120V 56A TO220-3
Datasheet
IPP147N12N3G Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 120V
Continuous Drain Current at 25°C 56A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 61μA
Max Gate Charge 49nC @ 10V
Max Input Capacitance 3220pF @ 60V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 107W (Tc)
Maximum Rds On at Id,Vgs 14.7 mOhm @ 56A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package PG-TO-220-3
Dimension TO-220-3
Win Source Part Number 069059-IPP147N12N3G
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IPP147N12N3G CAD Model

Description

The Infineon Technologies MOSFET is a N-Channel power transistor that can handle a maximum power dissipation of 107W at a temperature of 25°C.

  • Maximum Power Dissipation: 107W @ 25°C
  • Drain-Source Breakdown Voltage: 120V
  • Continuous Drain Current: 56A
  • Gate-Source Threshold Voltage: 4V @ 61μA
  • Maximum Gate Charge: 49nC @ 10V
  • Maximum Rds On at Id,Vgs: 14.7 mOhm @ 56A, 10V
  • Package: PG-TO-220-3
  • Temperature Range: -55°C to 175°C
  • Application: Discrete Semiconductor Products

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77+ $3.7503 $288.7731
104+ $3.3622 $349.6688
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