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PBSS2515VV

Part No PBSS2515VV
Manufacturer NXP / Nexperia
Catalog OEM Parts (O - R)
Sample
Rohs State Need to verify
ECAD Module
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Win Source Part Number 1083949-PBSS2515VV
Categories OEM Parts(O-R)
Manufacturer NXP
Popularity Low
Supply and Demand Status Shortage
Ultra Librarian 3D Model Ultra Librarian PBSS2515VV CAD Model

Description

The NXP PBSS2515VV is a high-performance, low VCEsat (BISS) PNP transistor housed in a compact, leadless medium power SOT1061 (DFN2020-6) Surface-Mounted Device (SMD) plastic package. This transistor is designed to deliver a perfect balance between efficiency and power, making it an ideal choice for power management and switching applications.

Key Features

  • Low Saturation Voltage: The PBSS2515VV offers a very low collector-emitter saturation voltage, which translates to reduced power loss and improved overall efficiency in application circuits.
  • High Efficiency: With its high current gain and fast switching capabilities, this transistor is optimized for low voltage (1.5V) applications, ensuring high efficiency across a wide range of operating conditions.
  • Power Management: It is particularly suited for linear voltage regulation, DC-DC conversion, and power management in portable devices, due to its low power dissipation and high energy efficiency.
  • Medium Power Capability: The device can handle medium power loads while maintaining a high level of performance, making it versatile for a variety of electronic circuits.
  • Space-Saving Design: The compact DFN2020-6 package is designed for space-constrained applications, providing a high power density solution for modern electronic designs.

Applications

The NXP PBSS2515VV is suitable for a wide range of applications, including but not limited to:

  • Power management modules
  • Charging circuits for portable devices
  • DC-DC converters
  • Switching regulators
  • Signal processing

Technical Specifications

Below are some of the technical specifications of the NXP PBSS2515VV PNP transistor:

  • Collector-Emitter Voltage (VCEO): -15V
  • Collector Current (IC): -2A
  • Collector-Emitter Saturation Voltage (VCEsat): -0.055V at -1A, -0.2V at -2A
  • DC Current Gain (hFE): 100 - 600 at -500mA
  • Transition Frequency (fT): 100MHz
  • Operating Temperature Range: -55°C to +150°C

With its exceptional performance and compact footprint, the NXP PBSS2515VV is a reliable and efficient solution for designers looking to optimize their power-sensitive applications.

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