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PDTA114TE,115

Part No PDTA114TE,115
Manufacturer NXP / Nexperia
Catalog Transistors (BJT) - Single, Pre - Biased
Description TRANS PREBIAS PNP 150MW SC75
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer NXP
Packaging Reel - TR
Status Obsolete(EOL)
Transistor Polarity PNP - Pre-Biased
Maximum Current Collector 100mA
VCEO Maximum Collector-Emitter Breakdown Voltage 50V
Resistor - Base (R1) (Ohms) 10k
Typical Gain (hFE) (Min) 200 @ 1mA, 5V
Max Vce (sat) 150mV @ 500μA, 10mA
Collector Cut-off Current(Max) 1μA
Maximum Power Dissipation 150mW
Mounting SMD (SMT)
Case / Package SC-75
Win Source Part Number 096860-PDTA114TE,115
Popularity Medium
Supply and Demand Status Sufficient
Application Field Used in Industrial, Power Management, Automotive
Ultra Librarian 3D Model Ultra Librarian PDTA114TE,115 CAD Model

Description

The PDTA114TE,115 is a high-quality PNP transistor manufactured by NXP Semiconductors, a leader in the industry known for its innovative and reliable products. This transistor is part of NXP's series of PNP resistors equipped with built-in bias resistors, designed to simplify circuit design and reduce component count. It is an ideal solution for applications requiring current regulation and a switched load, making it a versatile component suited for a wide range of electronic devices.

Key Features:

  • Integrated Bias Resistor Network: The PDTA114TE,115 includes a built-in bias resistor network which consists of one resistor from base to emitter and another from base to collector. This integration facilitates the design process and enhances device performance.
  • Surface-Mount Package: The device comes in a small SOT416 (SC-75) surface-mount package, which is ideal for space-constrained applications. The compact footprint ensures that it can be integrated into modern high-density circuit boards with ease.
  • High Current Gain: With a high current gain (hFE), this transistor can amplify a small input current into a much larger output current, making it suitable for various amplification purposes.
  • Low Power Consumption: The PDTA114TE,115 is designed for low power consumption, making it an energy-efficient choice for battery-powered devices.
  • Robust Performance: NXP's commitment to quality ensures that this transistor performs reliably under a broad range of operating conditions, including a wide temperature range and varying voltage levels.

Applications:

The PDTA114TE,115 transistor is commonly used in a variety of applications, including but not limited to:

  • Switching and amplification in consumer electronics
  • Drive circuits in automation and control systems
  • Power management in portable devices
  • Signal processing in communication equipment

Whether you are designing a simple consumer gadget or a complex industrial system, the PDTA114TE,115 from NXP provides a reliable and efficient solution for your PNP transistor needs. Its integrated bias resistors, low power consumption, and robust performance make it an excellent choice for designers looking to optimize their circuit designs.

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Pricing & Ordering

Quantity Unit Price Ext. Price
4,070+ $0.0142 $57.7940
9,905+ $0.0117 $115.8885
15,310+ $0.0113 $173.0030
21,055+ $0.0110 $231.6050
27,175+ $0.0106 $288.0550
36,590+ $0.0095 $347.6050
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Availability: 48,000 pieces
MOQ: 4070 pcs
Order Increment : 1 pcs
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