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PDTA114TEF,115

Part No PDTA114TEF,115
Manufacturer NXP / Nexperia
Catalog Transistors (BJT) - Single, Pre - Biased
Description TRANS PREBIAS PNP 150MW SC89
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer NXP
Packaging Reel - TR
Status Obsolete(EOL)
Transistor Polarity PNP - Pre-Biased
Maximum Current Collector 100mA
VCEO Maximum Collector-Emitter Breakdown Voltage 50V
Resistor - Base (R1) (Ohms) 10k
Typical Gain (hFE) (Min) 200 @ 1mA, 5V
Max Vce (sat) 150mV @ 500μA, 10mA
Collector Cut-off Current(Max) 1μA
Maximum Power Dissipation 150mW
Mounting SMD (SMT)
Case / Package SC-89
Win Source Part Number 102710-PDTA114TEF,115
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian PDTA114TEF,115 CAD Model

Description

NXP PDTA114TEF,115 PNP Transistor

The NXP PDTA114TEF,115 is a high-quality PNP bipolar junction transistor (BJT) that serves as a robust and reliable component in a wide range of electronic circuits. This particular transistor is part of the NXP's series of PNP transistors designed for general-purpose applications and is known for its efficiency and performance.

Key Features:

  • Device Type: PNP Resistor-Equipped Transistor (RET)
  • Package: Surface-mounted SOT416 (SC-75) package, which is suitable for automated assembly processes and helps in saving space on printed circuit boards (PCBs).
  • Current Handling: Capable of handling collector currents up to 100 mA, making it suitable for a variety of low-power applications.
  • Voltage Ratings: With a collector-emitter voltage (VCEO) of -50 V, it can be used in circuits with moderate voltage requirements.
  • Built-in Bias Resistor: Features a built-in bias resistor, simplifying circuit design by reducing component count. The resistor has a value of 10 kΩ, which is optimal for biasing the transistor in many applications.
  • Power Dissipation: Offers a total power dissipation of 250 mW, allowing it to handle moderate levels of power in electronic circuits without overheating.
  • High Gain: Exhibits high current gain (hFE), ensuring a high level of amplification in applications where signal amplification is needed.
  • RoHS Compliant: Meets the Restriction of Hazardous Substances (RoHS) directive, making it environmentally friendly and suitable for use in a wide range of markets.

The NXP PDTA114TEF,115 is an ideal choice for designers looking for a PNP transistor with a good balance of performance and compact form factor. Its built-in bias resistors make it a convenient option for both simple and complex electronic designs, particularly where space is at a premium and efficiency is crucial. Whether it's for switching applications, amplification, or as a simple current source, this transistor is versatile enough to fit a multitude of uses in consumer electronics, industrial control systems, and communication devices.

Overall, the NXP PDTA114TEF,115 PNP transistor is a testament to NXP's commitment to providing high-quality, reliable components for the electronics industry.

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