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Same model may have multiple batches, images only for reference.
SI7840BDP-T1-E3 Real Image
Same model may have multiple batches, images only for reference.

SI7840BDP-T1-E3

Part No SI7840BDP-T1-E3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 11A PPAK SO-8
Datasheet
SI7840BDP-T1-E3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 11A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 3V @ 250μA
Max Gate Charge 21nC @ 4.5V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 1.8W (Ta)
Maximum Rds On at Id,Vgs 8.5 mOhm @ 16.5A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package PowerPAK SO-8
Dimension PowerPAK SO-8
Win Source Part Number 028669-SI7840BDP-T1-E3
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian SI7840BDP-T1-E3 CAD Model

Description

The Vishay 028669-SI7840BDP-T1-E3 is an N-Channel MOSFET designed for use in Discrete Semiconductor Products.

  • Maximum Power Dissipation: 1.8W (Ta)
  • Drain-Source Breakdown Voltage: 30V
  • Continuous Drain Current @ 25°C: 11A (Ta)
  • Gate-Source Threshold Voltage: 3V @ 250μA
  • Maximum Gate Charge: 21nC @ 4.5V
  • Maximum Rds On @ Id,Vgs: 8.5 mOhm @ 16.5A, 10V
  • Status: obsolete (EOL)
  • Temperature Range: -55°C to 150°C (TJ)
  • Supply and Demand Status: limited

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Quantity Unit Price Ext. Price
35+ $1.6817 $58.8595
85+ $1.3802 $117.3170
130+ $1.3363 $173.7190
180+ $1.2936 $232.8480
235+ $1.2509 $293.9615
310+ $1.1215 $347.6650
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