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PDTB123EK

Part No PDTB123EK
Manufacturer NXP / Nexperia
Catalog Transistors (BJT) - Single, Pre - Biased
Description TRANS PREBIAS PNP 250MW SMT3
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer NXP
Packaging Reel - TR
Status Obsolete(EOL)
Transistor Polarity PNP - Pre-Biased
Maximum Current Collector 500mA
VCEO Maximum Collector-Emitter Breakdown Voltage 50V
Resistor - Base (R1) (Ohms) 2.2k
Resistor - Emitter Base (R2) (Ohms) 2.2k
Typical Gain (hFE) (Min) 40 @ 50mA, 5V
Max Vce (sat) 300mV @ 2.5mA, 50mA
Collector Cut-off Current(Max) 500nA
Maximum Power Dissipation 250mW
Mounting SMD (SMT)
Case / Package SMT3; MPAK
Win Source Part Number 042085-PDTB123EK
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian PDTB123EK CAD Model

Description

The PDTB123EK from NXP Semiconductors is a robust, high-performance PNP bipolar digital transistor housed in a compact SOT23 (TO-236AB) surface-mounted device package. This transistor is designed for use in a wide range of electronic applications, offering a seamless blend of efficiency and reliability.

With its integrated bias resistor network, the PDTB123EK simplifies circuit design by reducing component count, which in turn minimizes PCB space requirements and enhances system reliability. The built-in resistors are precisely engineered to provide stable electrical characteristics, making this transistor ideal for digital switching applications where space is at a premium.

Key Features:

  • Integrated Bias Resistor: The transistor comes with a built-in bias resistor network, which greatly simplifies circuit design and helps to reduce the overall component count.
  • Compact Size: Its SOT23 package is designed for optimal space-saving on PCBs, making it perfect for compact electronic assemblies.
  • High Collector Current: The device supports a collector current of up to 500 mA, allowing it to handle significant power for its size.
  • Low V<sub>CEsat: Exhibits low collector-emitter saturation voltage, which translates to reduced power dissipation and improved efficiency.
  • Wide Operating Temperature Range: Capable of operating over a broad temperature range, making it suitable for various industrial applications.

Whether it's for driving LEDs, managing power in portable devices, or acting as a switch in various digital and analog circuits, the PDTB123EK is a versatile choice that engineers can rely on. Its robustness is further highlighted by its ability to withstand ESD events, thereby offering additional protection for sensitive electronic components.

For designers and engineers looking for a reliable and space-efficient PNP transistor, the NXP PDTB123EK offers a blend of performance and practicality that is hard to beat. Its ease of integration into existing designs, thanks to its standardized SOT23 package, ensures it is a go-to component for a multitude of electronic applications.

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