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PDTC123EK

Part No PDTC123EK
Manufacturer NXP / Nexperia
Catalog Transistors (BJT) - Single, Pre - Biased
Description TRANS PREBIAS NPN 250MW SMT3
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer NXP
Packaging Reel - TR
Status Obsolete(EOL)
Transistor Polarity NPN - Pre-Biased
Maximum Current Collector 100mA
VCEO Maximum Collector-Emitter Breakdown Voltage 50V
Resistor - Base (R1) (Ohms) 2.2k
Resistor - Emitter Base (R2) (Ohms) 2.2k
Typical Gain (hFE) (Min) 30 @ 20mA, 5V
Max Vce (sat) 150mV @ 500μA, 10mA
Collector Cut-off Current(Max) 1μA
Maximum Power Dissipation 250mW
Mounting SMD (SMT)
Case / Package SMT3; MPAK
Win Source Part Number 271659-PDTC123EK
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian PDTC123EK CAD Model

Description

The PDTC123EK from NXP Semiconductors is a high-performance, surface-mount NPN resistor-equipped transistor, also known as a digital transistor, that comes in a small SOT23 plastic package. Designed to simplify circuit design and minimize component count, this transistor is ideal for use in switching and amplification applications across a wide range of electronic devices.

Key Features

  • Integrated Bias Resistor: The PDTC123EK features a built-in bias resistor network, which facilitates the design process by reducing the number of external components required. This integration ensures a more compact and reliable circuit design.
  • High Current Gain: With a high current gain (hFE), this transistor can control a larger output current with a smaller input current, making it efficient for driving loads in digital applications.
  • Low Voltage Operation: It operates at low voltages, making it suitable for portable and battery-powered devices where power efficiency is critical.
  • Fast Switching Speed: The PDTC123EK is characterized by its fast switching speed, which is essential for high-speed signal processing and efficient operation in digital circuits.
  • Robust Performance: NXP's commitment to quality ensures that this transistor provides reliable performance and a long operational life, even under challenging conditions.

Applications

The versatility of the PDTC123EK makes it suitable for a broad range of applications, including:

  • Logic level shifting
  • Driver circuits
  • Power management functions
  • Control systems
  • Signal processing

Technical Specifications

Parameter Value Package SOT23 Configuration Single NPN Collector-Emitter Voltage (VCEO) 50V Collector Current (IC) 100mA Power Dissipation (Pd) 300mW DC Current Gain (hFE) Minimum 100

For detailed information and datasheets, it is recommended to consult the official NXP Semiconductors website or contact authorized distributors. The PDTC123EK is a testament to NXP's innovation in providing efficient and reliable semiconductor solutions for the modern electronics industry.

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