The PDTC123JE,115 is a high-quality NPN bipolar digital transistor from NXP Semiconductors, a renowned leader in the electronics industry. This transistor is specifically designed to provide an efficient solution for digital switching applications, offering a compact and reliable component for various electronic circuits.

Key Features

• Transistor Type: NPN - Pre-Biased / Digital
• Configuration: Single
• Package / Case: SOT-323 (SC-70)
• Mounting Type: Surface Mount
• Collector- Emitter Voltage VCEO Max: 50V
• Collector Current - Continuous Ic Max: 100mA
• DC Current Gain hFE Min: 100 at 5mA / 5V
• Resistor - Base (R1) / Resistor - Emitter (R2): 2.2 kOhms / 47 kOhms
• Power Dissipation Pd: 250mW
• Operating Temperature: -55°C to +150°C

Applications

The PDTC123JE,115 is versatile and can be used in a wide range of applications. It is particularly well-suited for use in:

• Inverter circuits
• Interface circuits
• Driver circuits
• Switching loads

Quality and Reliability

NXP's commitment to quality is evident in the PDTC123JE,115, which is designed to meet the stringent requirements of the electronics industry. With its robust construction and the ability to operate across a wide range of temperatures, this transistor is ideal for applications that require a high level of reliability and performance.

Environmental Compliance

The PDTC123JE,115 is compliant with various environmental standards, ensuring that it meets the current demands for eco-friendly electronic components. This includes compliance with RoHS (Restriction of Hazardous Substances), providing peace of mind for consumers and manufacturers looking to create products that are environmentally responsible.