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PH8230E

Part No PH8230E
Manufacturer NXP / Nexperia
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 67A LFPAK
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Nexperia USA Inc.
Packaging Cut Reel
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 67A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2.5V @ 1mA
Max Gate Charge 14nC @ 5V
Max Input Capacitance 1400pF @ 10V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 62.5W (Tc)
Maximum Rds On at Id,Vgs 8.2 mOhm @ 10A, 10V
Mounting SMD (SMT)
Case / Package LFPAK56, Power-SO8
Dimension SC-100, SOT-669
Win Source Part Number 061452-PH8230E
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian PH8230E CAD Model

Description

NXP PH8230E Power MOSFET

The NXP PH8230E is a robust Power MOSFET designed to deliver high efficiency and performance for a wide range of applications. This NXP semiconductor device is part of the company's extensive portfolio of power management solutions, engineered to meet the increasing demand for energy-saving and environmentally-friendly products.

The PH8230E is a surface-mounted device that features a low on-state resistance (R<sub>DS(on)) which significantly reduces conduction losses, making it an ideal choice for high-efficiency power supplies. Its compact and durable design is optimized for automated assembly processes, ensuring reliability and consistency in production.

Key Features:

  • Low Threshold Voltage: The device operates at a low gate threshold voltage, which enhances its performance in low voltage applications and ensures a low gate drive requirement.
  • High-Speed Switching: The PH8230E offers high-speed switching capabilities, which is essential for reducing switching losses and improving overall efficiency in power conversion systems.
  • Enhanced Thermal Performance: With an excellent thermal design, the PH8230E can handle higher currents and operate at higher temperatures, making it suitable for demanding environments.
  • Robustness: The device is designed to withstand high energy pulses in the avalanche and commutation modes, which ensures long-term reliability and stability.

Applications:

The versatility of the NXP PH8230E Power MOSFET allows it to be used in a variety of applications. These include, but are not limited to, DC/DC converters, power management in portable devices, motor control circuits, and power supplies for consumer electronics such as TVs, computers, and gaming consoles. Its performance characteristics also make it suitable for automotive applications and industrial automation systems.

By integrating the PH8230E into your design, you can expect improved power density, reduced heat generation, and enhanced overall efficiency, leading to energy savings and a reduction in the environmental impact of electronic devices.

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Pricing & Ordering

Quantity Unit Price Ext. Price
35+ $1.8422 $64.4770
80+ $1.5119 $120.9520
120+ $1.4645 $175.7400
165+ $1.4172 $233.8380
215+ $1.3710 $294.7650
285+ $1.2289 $350.2365
!
Prices are subject to market and will be confirmed after the order is placed.
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 22,500 pieces
MOQ: 35 pcs
Order Increment : 1 pcs
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