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PHD77NQ03T

Part No PHD77NQ03T
Manufacturer NXP / Nexperia
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 25V 75A DPAK
Sample
Rohs State rohs
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Categories Discrete Semiconductor Products
Manufacturer NXP
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 25V
Continuous Drain Current at 25°C 75A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 3.2V @ 1mA
Max Gate Charge 17.1nC @ 10V
Max Input Capacitance 860pF @ 12V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 107W (Tc)
Maximum Rds On at Id,Vgs 9.5 mOhm @ 25A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package DPAK
Dimension TO-252-3, DPak (2 Leads + Tab), SC-63
Win Source Part Number 061475-PHD77NQ03T
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian PHD77NQ03T CAD Model

Description

The NXP PHD77NQ03T is a high-performance, low voltage N-channel TrenchMOS™ transistor designed for a wide range of applications, including power management, load switching, and motor control. This MOSFET is part of NXP's leading-edge TrenchMOS portfolio, which is renowned for providing low on-state resistance, high switching speed, and excellent thermal performance.

Key Features

  • Low Threshold Voltage: The PHD77NQ03T boasts a low threshold voltage, making it suitable for low voltage applications that require efficient power conversion and fast switching capabilities.
  • High Efficiency: With its low on-state resistance (R<sub>DS(on)), this MOSFET minimizes conduction losses, thereby enhancing overall system efficiency.
  • High Current Capability: This device can handle high current loads, making it ideal for demanding applications.
  • Robust Thermal Performance: The PHD77NQ03T is encapsulated in a D-PAK package that offers excellent thermal conduction properties, allowing for better heat dissipation and improved reliability.
  • Fast Switching Speed: The fast switching characteristics of the PHD77NQ03T contribute to reduced switching losses, which is critical in high-frequency power conversion applications.

Applications

The versatility of the NXP PHD77NQ03T MOSFET makes it suitable for a broad range of applications, including:

  • DC/DC converters
  • Power supplies for computer peripherals and servers
  • Motor drives and controllers
  • Battery management systems
  • Load switches
  • Power management in portable devices

Product Specifications

Parameter Value Drain-source voltage (V<sub>DS) 30V Continuous drain current (I<sub>D) 77A Power dissipation (P<sub>D) 110W Operating temperature range -55°C to +175°C

The NXP PHD77NQ03T is a testament to NXP's commitment to providing advanced semiconductor solutions that meet the evolving needs of the electronics industry. With its robust design and high-performance characteristics, this MOSFET is an excellent choice for designers looking to optimize their power management systems.

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Pricing & Ordering

Quantity Unit Price Ext. Price
10+ $6.0915 $60.9150
24+ $4.9977 $119.9448
36+ $4.8418 $174.3048
50+ $4.6858 $234.2900
64+ $4.5299 $289.9136
86+ $4.0610 $349.2460
!
Prices are subject to market and will be confirmed after the order is placed.
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 24,500 pieces
MOQ: 10 pcs
Order Increment : 1 pcs
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