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PMN50XP,165

Part No PMN50XP,165
Manufacturer NXP / Nexperia
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 20V 4.8A 6TSOP
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer NXP
Packaging Reel - TR
Status Obsolete(EOL)
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 20V
Continuous Drain Current at 25°C 4.8A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 2.5V, 4.5V
Gate-Source Threshold Voltage 950mV @ 250μA
Max Gate Charge 10nC @ 4.5V
Max Input Capacitance 1020pF @ 20V
Maximum Gate-Source Voltage ±12V
Power Dissipation (Max) 2.2W (Tc)
Maximum Rds On at Id,Vgs 60 mOhm @ 2.8A, 4.5V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 6-TSOP
Dimension SC-74, SOT-457
Win Source Part Number 1089714-PMN50XP,165
Popularity Medium
Supply and Demand Status Sufficient
Quantity per package 10k pcs
Ultra Librarian 3D Model Ultra Librarian PMN50XP,165 CAD Model

Description

The PMN50XP,165 is a high-performance, low-power MOSFET produced by NXP Semiconductors. This advanced power management device is designed to meet the stringent requirements of modern electronic circuits, providing efficient power conversion with minimal losses.

Key Features

  • Low Threshold Voltage: The PMN50XP,165 boasts a low threshold voltage that ensures low-voltage operation, making it suitable for battery-powered applications and energy-sensitive systems.
  • High Efficiency: With its reduced conduction losses and optimized switching performance, this MOSFET achieves high efficiency, which is critical for power management in portable devices.
  • Small Footprint: The compact package design allows for space-saving PCB layouts, which is essential for miniaturized electronic products.
  • Robust Thermal Performance: The device is capable of operating at high temperatures, ensuring reliability and longevity even under thermal stress.

Applications

The versatility of the PMN50XP,165 makes it ideal for a wide range of applications, including:

  • Power supply modules
  • DC-DC converters
  • Battery management systems
  • Motor control circuits
  • Load switches
  • High-speed switching applications

Product Specifications

Parameter Value Drain-Source Voltage (V<sub>DS) 20V Continuous Drain Current (I<sub>D) 4.2A Power Dissipation (P<sub>D) 1.25W Package SOT-23

Engineered for optimal performance and efficiency, the PMN50XP,165 from NXP Semiconductors is a top choice for designers looking to enhance their power management solutions. Its robust design and advanced features ensure that it can meet the challenges of the most demanding applications.

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Pricing & Ordering

Quantity Unit Price Ext. Price
225+ $0.2599 $58.4775
545+ $0.2137 $116.4665
840+ $0.2067 $173.6280
1,160+ $0.1998 $231.7680
1,490+ $0.1940 $289.0600
2,000+ $0.1733 $346.6000
!
Prices are subject to market and will be confirmed after the order is placed.
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 34,500 pieces
MOQ: 225 pcs
Order Increment : 1 pcs
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Shipping Information

Shipped from HK warehouse
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