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PHE13009/DG,127

Part No PHE13009/DG,127
Manufacturer NXP / Nexperia
Catalog Transistors (BJT) - Single
Description NOW WEEN - PHE13009 - POWER BIPO / Bipolar (BJT) Transistor NPN 400 V 12 A 80 W Through Hole TO-220AB
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Rohs State Need to verify
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Category Discrete Semiconductor Products>Transistors - Bipolar (BJT) - Single
Mfr NXP USA Inc.
Package Bulk
Transistor Type NPN
Current - Collector (Ic) (Max) 12 A
Voltage - Collector Emitter Breakdown (Max) 400 V
Vce Saturation (Max) @ Ib, Ic 2V @ 1.6A, 8A
Current - Collector Cutoff (Max) 100µA
DC Current Gain (hFE) (Min) @ Ic, Vce 8 @ 5A, 5V
Power - Max 80 W
Temperature Range - Operating 150°C (TJ)
Mounting Type Through Hole
Package / Case TO-220-3
Supplier Device Package TO-220AB
ECCN EAR99
HTSUS 8541.29.0095
Other Names WENNXPPHE13009/DG,127,2156-PHE13009/DG,127
Standard Package 1
Win Source Part Number 1056602-PHE13009/DG,127
Ultra Librarian 3D Model Ultra Librarian PHE13009/DG,127 CAD Model

Description

The PHE13009/DG,127 is a high-voltage, high-speed power transistor designed and manufactured by NXP Semiconductors, a leader in the semiconductor industry. This device is particularly suited for applications in switch mode power supplies (SMPS), lighting circuits, industrial and consumer electronics where reliability and performance are critical.

Key Features

  • Voltage Capabilities: The PHE13009/DG,127 is capable of withstanding high voltages, making it ideal for use in circuits that experience high voltage spikes or surges.
  • High-Speed Switching: With its fast switching capabilities, this transistor is perfect for high-frequency operations, ensuring efficient performance in power conversion applications.
  • Power Dissipation: It is designed to handle significant power levels, which is essential for maintaining stability and performance in high-power systems.
  • Thermal Performance: The device's excellent thermal characteristics help to keep the junction temperatures within safe operating limits, even under high load conditions.

Applications

Due to its robust design and high-speed switching capabilities, the PHE13009/DG,127 is suitable for a variety of applications, including:

  • Electronic Ballasts for Lighting
  • Switch Mode Power Supplies (SMPS)
  • DC-DC Converters
  • Power Inverters
  • Motor Control Circuits

Technical Specifications

Parameter Value
Collector-Emitter Voltage (Vceo) 700V
Collector Current (Ic) 12A
Power Dissipation (Pd) 83W
Configuration Single
Package Type TO-220AB

Quality and Reliability

NXP Semiconductors is committed to delivering high-quality and reliable components. The PHE13009/DG,127 is no exception, as it undergoes rigorous testing and quality control measures to ensure it meets the industry standards for performance and durability.

For more detailed information and datasheets, customers are encouraged to visit NXP's official website or contact their local NXP sales representative.

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