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PHP34NQ11T

Part No PHP34NQ11T
Manufacturer NXP / Nexperia
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 110V 35A TO220AB
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer NXP
Packaging Tube/Rail
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 110V
Continuous Drain Current at 25°C 35A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 1mA
Max Gate Charge 40nC @ 10V
Max Input Capacitance 1700pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 136W (Tc)
Maximum Rds On at Id,Vgs 40 mOhm @ 17A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package TO-220AB
Dimension TO-220-3
Win Source Part Number 042118-PHP34NQ11T
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian PHP34NQ11T CAD Model

Description

Introducing the NXP PHP34NQ11T Power MOSFET

The NXP PHP34NQ11T is a state-of-the-art power MOSFET designed for high-efficiency power conversion and switching applications. This advanced semiconductor device is a perfect choice for engineers looking to enhance system performance in a wide range of industrial, automotive, and consumer electronics.

Key Features

  • Low On-Resistance: The PHP34NQ11T boasts an exceptionally low on-resistance (R<sub>DS(on)), which translates to reduced conduction losses and improved overall efficiency in your circuits.
  • High Switching Speed: Engineered for speed, this MOSFET offers fast switching capabilities, making it ideal for high-frequency applications and reducing energy loss during power conversion.
  • Robust Thermal Performance: With its excellent thermal characteristics, the PHP34NQ11T can handle significant power levels while maintaining a stable operating temperature, ensuring reliability even under demanding conditions.
  • Advanced TrenchMOS Technology: Utilizing NXP's cutting-edge TrenchMOS technology, this component delivers superior performance and ruggedness, a hallmark of NXP's commitment to innovation in the power MOSFET domain.

Applications

The versatility of the NXP PHP34NQ11T makes it suitable for a variety of applications, including:

  • DC-to-DC converters
  • Motor drives
  • Power management systems
  • Automotive applications
  • Switching regulators

Product Specifications

Parameter Value Drain-to-Source Voltage (V<sub>DSS) 100V Continuous Drain Current (I<sub>D) 33A Power Dissipation (P<sub>D) 110W Operating Temperature Range -55°C to +175°C

In conclusion, the NXP PHP34NQ11T is a premium power MOSFET that offers superior performance for a range of demanding applications. Its low on-resistance, high-speed switching, and robust thermal management make it an excellent choice for designers looking to optimize their power systems for efficiency and reliability.

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Pricing & Ordering

Quantity Unit Price Ext. Price
110+ $0.4657 $51.2270
265+ $0.3821 $101.2565
410+ $0.3702 $151.7820
560+ $0.3583 $200.6480
725+ $0.3463 $251.0675
970+ $0.3105 $301.1850
!
Prices are subject to market and will be confirmed after the order is placed.
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 1,000 pieces
MOQ: 110 pcs
Order Increment : 1 pcs
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