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PHX45NQ11T,127

Part No PHX45NQ11T,127
Manufacturer NXP / Nexperia
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 110V 30.4A SOT186A
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer NXP
Packaging Tube/Rail
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 110V
Continuous Drain Current at 25°C 30.4A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 1mA
Max Gate Charge 61nC @ 10V
Max Input Capacitance 2600pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 62.5W (Tc)
Maximum Rds On at Id,Vgs 25 mOhm @ 25A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package TO-220-3
Dimension TO-220-3 Full Pack, Isolated Tab
Win Source Part Number 1087855-PHX45NQ11T,127
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian PHX45NQ11T,127 CAD Model

Description

The PHX45NQ11T,127 is a high-performance, N-channel TrenchMOS™ transistor designed and manufactured by NXP Semiconductors. This field-effect transistor (FET) is a testament to NXP's dedication to providing advanced power management solutions that cater to a wide range of electronic applications. It is particularly well-suited for use in automotive and industrial systems, where reliability and efficiency are paramount.

Key Features

  • Low On-State Resistance: The PHX45NQ11T,127 boasts a very low on-state resistance (R<sub>DS(on)), which translates to reduced conduction losses and improved overall efficiency in power conversion applications.
  • High-Speed Switching: With its fast switching capabilities, this transistor is ideal for high-frequency power switching applications, contributing to better performance in power supplies and DC-DC converters.
  • Robust Thermal Performance: The device is encapsulated in a TO-220 package, known for its excellent thermal characteristics, ensuring stable operation even under high temperature conditions.
  • Logic Level Gate Drive: It can be driven directly from logic level voltages, simplifying the gate drive circuitry and reducing the overall system complexity.

Applications

The versatility of the PHX45NQ11T,127 allows it to be used in a variety of applications, including:

  • Automotive applications such as engine control units, power distribution systems, and LED lighting
  • DC-DC converters and power management modules
  • Motor control circuits for industrial automation
  • Switch mode power supplies (SMPS) for consumer electronics

Technical Specifications

Some of the key technical specifications of the PHX45NQ11T,127 include:

  • Drain-source voltage (V<sub>DSS): 100V
  • Continuous drain current (I<sub>D): 45A
  • Power dissipation (P<sub>D): 88W
  • Operating temperature range: -55°C to +175°C

Overall, the PHX45NQ11T,127 from NXP Semiconductors is a robust and reliable component that offers a blend of high efficiency, fast switching, and thermal resilience, making it an excellent choice for designers looking to optimize their power management systems.

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