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PHX8NQ11T,127

Part No PHX8NQ11T,127
Manufacturer NXP / Nexperia
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 110V 7.5A SOT186A
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer NXP
Packaging Tube/Rail
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 110V
Continuous Drain Current at 25°C 7.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 1mA
Max Gate Charge 14.7nC @ 10V
Max Input Capacitance 360pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 27.7W (Tc)
Maximum Rds On at Id,Vgs 180 mOhm @ 6A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package TO-220-3
Dimension TO-220-3 Full Pack, Isolated Tab
Win Source Part Number 1087856-PHX8NQ11T,127
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian PHX8NQ11T,127 CAD Model

Description

The PHX8NQ11T,127 is a high-performance, N-channel TrenchMOS™ logic level FET designed and manufactured by NXP Semiconductors, a leader in the field of high-tech solutions. This MOSFET is tailored for a broad range of applications, offering a blend of power efficiency and robust performance.

Key Features

  • Low Threshold Voltage: The device features a low threshold voltage, making it compatible with logic level drive circuits and accessible for a variety of digital applications.
  • High-Speed Switching: Engineered for high-speed switching, the PHX8NQ11T,127 is an excellent choice for power management tasks where efficiency is paramount.
  • Low On-State Resistance: With its low on-state resistance (R<sub>DS(on)), this MOSFET minimizes power loss and heat generation, enhancing the overall system reliability.
  • Enhanced Durability: The product is encapsulated in a robust SOT-223 package, which not only provides good thermal performance but also ensures mechanical durability.

Applications

The versatility of the PHX8NQ11T,127 allows it to be used across a diverse range of applications. It is particularly suited for:

  • Power supply circuits
  • Motor control systems
  • Lighting systems
  • Automotive applications
  • Switch mode power supplies (SMPS)

Technical Specifications

Parameter Value Drain-Source Voltage (V<sub>DS) 30V Continuous Drain Current (I<sub>D) 8A Power Dissipation (P<sub>D) 1.25W Operating Temperature Range -55°C to +150°C

The PHX8NQ11T,127 from NXP is a testament to the company's commitment to providing high-quality, reliable components for the electronics industry. By integrating this MOSFET into your design, you can expect a significant boost in performance, power efficiency, and operational longevity.

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