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PMDPB42UN,115

Part No PMDPB42UN,115
Manufacturer NXP / Nexperia
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET 2N-CH 20V 3.9A HUSON6
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer NXP
Packaging Reel - TR
Status Obsolete(EOL)
FET Type 2 N-Channel (Dual)
FET Feature Logic Level Gate
Drain-Source Breakdown Voltage 20V
Continuous Drain Current at 25°C 3.9A
Maximum Rds On at Id,Vgs 50 mOhm @ 3.9A, 4.5V
Gate-Source Threshold Voltage 1V @ 250μA
Max Gate Charge 3.5nC @ 4.5V
Max Input Capacitance 185pF @ 10V
Maximum Power Dissipation 510mW
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package DFN2020-6
Win Source Part Number 1089508-PMDPB42UN,115
Popularity Medium
Supply and Demand Status Balance
Quantity per package 3k pcs
Ultra Librarian 3D Model Ultra Librarian PMDPB42UN,115 CAD Model

Description

The PMDPB42UN,115 is a cutting-edge MOSFET transistor developed by NXP Semiconductors, a leader in the semiconductor industry. This product is designed to meet the high-performance requirements of modern electronic applications, providing efficient power management and signal processing capabilities.

Key Features

  • Low On-Resistance: The PMDPB42UN,115 boasts an exceptionally low on-resistance, which translates to reduced power loss and improved efficiency during operation.
  • High-Speed Switching: Engineered for rapid switching, this MOSFET is ideal for high-frequency applications, ensuring minimal delay and high performance in power conversion and management systems.
  • Small Footprint: The compact size of the PMDPB42UN,115 makes it suitable for space-constrained applications, allowing designers to minimize the size of their electronic circuits without compromising on performance.
  • Dual N-Channel: This device features a dual N-channel configuration, providing a versatile solution for various circuit topologies and enhancing design flexibility.
  • Energy Efficiency: With its focus on energy efficiency, the PMDPB42UN,115 helps reduce the overall power consumption of electronic systems, contributing to longer battery life and reduced environmental impact.

Applications

The PMDPB42UN,115 is suited for a wide range of applications, including but not limited to:

  • Power management modules
  • DC/DC converters
  • Battery-powered devices
  • Motor control circuits
  • Switching regulators

Technical Specifications

The PMDPB42UN,115 operates with a continuous drain current of up to 3.1A, and can handle pulsed drain currents significantly higher. Its threshold voltage is low, ensuring that the device turns on at minimal gate voltages, making it compatible with low-voltage logic circuits. The MOSFET can operate over a wide temperature range, ensuring reliability in various environmental conditions.

Quality and Reliability

NXP Semiconductors is committed to delivering high-quality and reliable products. The PMDPB42UN,115 is manufactured with stringent quality control processes and is designed to meet the rigorous standards of the electronics industry, ensuring long-term performance and dependability for your electronic projects.

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Pricing & Ordering

Quantity Unit Price Ext. Price
23+ $2.5202 $57.9646
56+ $2.0686 $115.8416
87+ $2.0039 $174.3393
120+ $1.9392 $232.7040
155+ $1.8746 $290.5630
207+ $1.6805 $347.8635
!
Prices are subject to market and will be confirmed after the order is placed.
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 27,700 pieces
MOQ: 23 pcs
Order Increment : 1 pcs
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