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PMV185XN,215

Part No PMV185XN,215
Manufacturer NXP / Nexperia
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 1.1A TO-236AB
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer NXP
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 1.1A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 2.5V, 4.5V
Gate-Source Threshold Voltage 1.5V @ 250μA
Max Gate Charge 1.3nC @ 4.5V
Max Input Capacitance 76pF @ 15V
Maximum Gate-Source Voltage ±12V
Power Dissipation (Max) 325mW (Ta), 1.275W (Tc)
Maximum Rds On at Id,Vgs 250 mOhm @ 1.1A, 4.5V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package TO-236AB (SOT23)
Dimension TO-236-3, SC-59, SOT-23-3
Win Source Part Number 1089776-PMV185XN,215
Popularity Medium
Supply and Demand Status Sufficient
Quantity per package 3k pcs
Ultra Librarian 3D Model Ultra Librarian PMV185XN,215 CAD Model

Description

Product Overview: PMV185XN,215

The PMV185XN,215 is a cutting-edge, high-performance MOSFET transistor developed by NXP Semiconductors, a leader in the industry known for their innovative and reliable components. This particular product is designed to meet the demands of modern electronic circuits, providing efficient power management and signal processing capabilities.

Key Features

  • Device Type: P-channel enhancement mode Field-Effect Transistor (MOSFET)
  • Package: Housed in a compact SOT-23 (TO-236AB) surface-mount package, the PMV185XN,215 is designed for space-constrained applications.
  • Voltage Rating: It has a drain-source voltage (V<sub>DS) of -20V, making it suitable for a wide range of applications.
  • Current Capacity: The continuous drain current (I<sub>D) is rated at -4.3A, ensuring high current handling capabilities.
  • Low On-Resistance: With a low on-state resistance (R<sub>DS(on)) of 38 mΩ at V<sub>GS = -4.5V, it provides efficient power conversion with minimal losses.
  • Fast Switching: The PMV185XN,215 features fast switching speeds, which is essential for reducing switching losses and improving performance in high-frequency applications.
  • Thermal Performance: It is designed with an excellent thermal performance in mind, ensuring reliability and longevity even under high temperature operating conditions.

Applications

The versatility of the PMV185XN,215 allows it to be used in a variety of applications, including:

  • Power management circuits
  • Load switches
  • Battery management systems
  • DC-DC converters
  • Motor control modules
  • Portable and wearable devices

Quality and Reliability

NXP Semiconductors is committed to delivering products that adhere to the highest standards of quality and reliability. The PMV185XN,215 is no exception, as it undergoes rigorous testing and quality control measures to ensure it meets the stringent requirements of the industry. With NXP's reputation for excellence, customers can trust the PMV185XN,215 for their critical electronic designs.

Whether you are designing power-efficient portable devices or robust industrial systems, the PMV185XN,215 from NXP Semiconductors is an excellent choice for a reliable and high-performing P-channel MOSFET.

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Pricing & Ordering

Quantity Unit Price Ext. Price
40+ $1.4830 $59.3200
95+ $1.2162 $115.5390
150+ $1.1781 $176.7150
205+ $1.1400 $233.7000
265+ $1.1030 $292.2950
355+ $0.9887 $350.9885
!
Prices are subject to market and will be confirmed after the order is placed.
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 131,700 pieces
MOQ: 40 pcs
Order Increment : 1 pcs
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