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PSMN005-55P

Part No PSMN005-55P
Manufacturer NXP / Nexperia
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 55V 75A TO220AB
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer NXP
Packaging Tube/Rail
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 55V
Continuous Drain Current at 25°C 75A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2V @ 1mA
Max Gate Charge 103nC @ 5V
Max Input Capacitance 6500pF @ 25V
Maximum Gate-Source Voltage ±15V
Power Dissipation (Max) 230W (Tc)
Maximum Rds On at Id,Vgs 5.8 mOhm @ 25A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package TO-220AB
Dimension TO-220-3
Win Source Part Number 210270-PSMN005-55P
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian PSMN005-55P CAD Model

Description

The PSMN005-55P from NXP Semiconductors is a high-performance, N-channel enhancement-mode Field-Effect Transistor (FET) designed for use in a wide range of power management applications. This MOSFET is a part of NXP's renowned Power-SO8 portfolio and offers a perfect balance between low on-state resistance (R<sub>DS(on)) and fast switching performance, making it suitable for high-efficiency power conversion in both hard-switched and soft-switched circuits.

Key Features

  • Low On-State Resistance: The PSMN005-55P boasts an exceptionally low R<sub>DS(on) of just 5.5 mΩ at a gate drive of 10 V, which significantly reduces conduction losses and improves overall efficiency.
  • High Current Capability: With a continuous drain current (I<sub>D) of up to 80 A, this MOSFET can handle high current loads, making it ideal for demanding applications.
  • High-Speed Switching: The device's optimized gate charge (Q<sub>g) and low intrinsic capacitances enable high-speed switching, which is crucial for reducing switching losses in power conversion systems.
  • Robust Thermal Performance: The PSMN005-55P is encapsulated in a Power-SO8 package that provides excellent thermal performance, ensuring reliability even under high-power and high-temperature operating conditions.
  • 100% Avalanche Tested: This MOSFET is guaranteed to withstand repetitive avalanche events, ensuring durability and long-term reliability in rugged environments.

Applications

The versatility of the PSMN005-55P MOSFET makes it suitable for a variety of applications, including:

  • DC/DC converters
  • Motor drives
  • Power supplies for servers, telecom, and computing systems
  • Synchronous rectification in switched-mode power supplies
  • Battery management systems
  • Power tools and e-bikes

In summary, the NXP PSMN005-55P is a robust and efficient solution for designers seeking a high-performance MOSFET that can deliver superior power handling and efficiency. Its combination of low R<sub>DS(on), high current capability, and fast switching performance makes it an excellent choice for a wide range of power management tasks.

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