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PSMN005-75B

Part No PSMN005-75B
Manufacturer NXP / Nexperia
Catalog Transistors - FETs, MOSFETs - RF
Description Trans MOSFET N-CH Si 75V 75A 3-Pin(2+Tab) D2PAK / MOSFET N-CH 75V 75A D2PAK
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Nexperia USA Inc.
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 75V
Continuous Drain Current at 25°C 75A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 1mA
Max Gate Charge 165nC @ 10V
Max Input Capacitance 8250pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 230W (Tc)
Maximum Rds On at Id,Vgs 5 mOhm @ 25A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package D2PAK
Dimension TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Win Source Part Number 352752-PSMN005-75B
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Balance
Family Name PSMN005-75B
Introduction Date April 26, 2002
ECCN EAR99
Country of Origin Philippines
Halogen Free Compliant
Estimated EOL Date 2027
Ultra Librarian 3D Model Ultra Librarian PSMN005-75B CAD Model

Description

Product Overview: PSMN005-75B MOSFET by NXP Semiconductors

The PSMN005-75B from NXP Semiconductors is a high-performance, N-channel enhancement mode Field-Effect Transistor (MOSFET) designed for a wide range of applications. This power MOSFET is part of NXP's portfolio of low voltage products and is particularly well-suited for high-efficiency power management tasks.

Key Features

  • Low On-Resistance: The PSMN005-75B features an extremely low on-state resistance (R<sub>DS(on)), which significantly reduces conduction losses and enhances the overall efficiency of the system in which it is used.
  • High Current Capability: With the ability to handle continuous drain currents up to 75A, this MOSFET can support high-power applications, making it an excellent choice for demanding environments.
  • High-Speed Switching: The fast switching performance of the PSMN005-75B ensures minimal power loss during the transition from on to off states and vice-versa, which is crucial for applications where switching efficiency is paramount.
  • Low Threshold Voltage: The device operates at a low gate threshold voltage, which allows for reduced drive power and lower gate drive requirements, simplifying the design of the drive circuitry.
  • Robust Thermal Performance: The PSMN005-75B is housed in a TO-220 package, which provides excellent thermal characteristics and ensures reliable operation even at elevated temperatures.

Applications

The versatility of the PSMN005-75B MOSFET makes it ideal for a multitude of applications, including but not limited to:

  • DC/DC Converters
  • Motor Drives
  • Power Supply Units
  • Battery Management Systems
  • Automotive Electronics
  • Switch Mode Power Supplies (SMPS)

Quality and Reliability

NXP Semiconductors is committed to delivering products that meet the highest standards of quality and reliability. The PSMN005-75B MOSFET is no exception, offering designers a robust and efficient solution for their power management needs. With its excellent performance characteristics, this MOSFET is an excellent choice for engineers looking to optimize their designs for both performance and cost.

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Pricing & Ordering

Quantity Unit Price Ext. Price
40+ $1.6320 $65.2800
90+ $1.3398 $120.5820
135+ $1.2982 $175.2570
185+ $1.2555 $232.2675
240+ $1.2139 $291.3360
320+ $1.0880 $348.1600
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Prices are subject to market and will be confirmed after the order is placed.
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 510 pieces
MOQ: 40 pcs
Order Increment : 1 pcs
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