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PSMN009-100P

Part No PSMN009-100P
Manufacturer NXP / Nexperia
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 100V 75A TO220AB
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Nexperia USA Inc.
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 100V
Continuous Drain Current at 25°C 75A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 1mA
Max Gate Charge 156nC @ 10V
Max Input Capacitance 8250pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 230W (Tc)
Maximum Rds On at Id,Vgs 8.8 mOhm @ 25A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package TO-220AB
Dimension TO-220-3
Win Source Part Number 210273-PSMN009-100P
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian PSMN009-100P CAD Model

Description

Product Overview: PSMN009-100P MOSFET

The PSMN009-100P is a high-performance N-channel enhancement mode Field-Effect Transistor (FET) produced by NXP Semiconductors, a leader in the industry. This MOSFET is designed to deliver efficiency and power handling capabilities to a broad range of applications. It is housed in a TO-220 package, which is widely recognized for its robustness and ability to handle significant power levels and thermal loads.

Key Features

  • Low On-State Resistance: The PSMN009-100P offers an exceptionally low on-state resistance (R<sub>DS(on)) of just 9 mΩ at V<sub>GS = 10 V, which translates to reduced conduction losses and improved overall efficiency.
  • High Continuous Drain Current: With a continuous drain current (I<sub>D) of 100 A, this MOSFET can handle high current applications, making it ideal for power conversion and management tasks.
  • Fast Switching Speed: The device features fast switching capabilities, which are crucial for applications that require high-speed operation, such as switching power supplies and DC-DC converters.
  • Enhanced Thermal Performance: The TO-220 package enhances the thermal performance of the PSMN009-100P, enabling it to operate effectively under high temperature conditions.

Applications

The versatility of the PSMN009-100P MOSFET allows it to be used in a variety of applications, including:

  • DC/DC converters
  • Power management systems
  • Motor drives
  • Computing and server power supplies
  • Automotive applications

Quality and Reliability

NXP is known for its commitment to quality and reliability, and the PSMN009-100P is no exception. It is manufactured using proven technology that ensures consistent performance and longevity. This MOSFET is a reliable choice for designers and engineers looking to create efficient and durable electronic systems.

Summary

The PSMN009-100P from NXP is a testament to the company's engineering expertise, offering low resistance, high current capacity, and fast switching in a package designed for excellent thermal performance. Suitable for a wide range of applications, this MOSFET is an excellent choice for those seeking a combination of efficiency, power handling, and reliability.

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Pricing & Ordering

Quantity Unit Price Ext. Price
80+ $0.6556 $52.4480
190+ $0.5380 $102.2200
290+ $0.5212 $151.1480
400+ $0.5044 $201.7600
515+ $0.4875 $251.0625
690+ $0.4371 $301.5990
!
Prices are subject to market and will be confirmed after the order is placed.
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 52,000 pieces
MOQ: 80 pcs
Order Increment : 1 pcs
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