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PSMN013-100PS

Part No PSMN013-100PS
Manufacturer NXP / Nexperia
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 100V 68A TO220AB
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Nexperia USA Inc.
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 100V
Continuous Drain Current at 25°C 68A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 1mA
Max Gate Charge 59nC @ 10V
Max Input Capacitance 3195pF @ 50V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 170W (Tc)
Maximum Rds On at Id,Vgs 13.9 mOhm @ 15A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package TO-220AB
Dimension TO-220-3
Win Source Part Number 210277-PSMN013-100PS
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian PSMN013-100PS CAD Model

Description

The PSMN013-100PS is a high-performance N-channel MOSFET produced by NXP Semiconductors, designed to deliver efficiency and reliability for a wide range of applications. This power MOSFET is part of NXP's portfolio of field-effect transistors that are engineered to achieve low on-state resistance and to provide high switching performance.

Key Features

  • Low On-Resistance: The PSMN013-100PS boasts an extremely low on-state resistance (R<sub>DS(on)) of just 13 mΩ at V<sub>GS = 10 V, which enhances its efficiency by minimizing conductive losses.
  • High Current Capability: With a continuous drain current (I<sub>D) of 100 A, this MOSFET can handle high current applications with ease, making it suitable for power-intensive tasks.
  • High-Speed Switching: Designed for fast switching, the device ensures reduced switching losses, which is crucial for high-frequency power conversion systems.
  • Robust Thermal Performance: The PSMN013-100PS is encapsulated in a TO-220 package, which is known for its excellent thermal conduction properties, allowing for better heat dissipation during operation.
  • High Avalanche Energy Rating: It is capable of withstanding high energy pulses in the avalanche and commutation modes, which ensures reliability under harsh conditions.

Applications

The versatility of the PSMN013-100PS makes it ideal for a variety of applications, including:

  • DC/DC converters
  • Motor drives
  • Power management systems
  • Automotive applications
  • Switching power supplies
  • Power inverters

Quality and Reliability

NXP Semiconductors is committed to delivering products that meet the highest standards of quality and reliability. The PSMN013-100PS MOSFET is no exception, as it is manufactured with state-of-the-art technology and subjected to rigorous testing to ensure its performance in even the most demanding conditions.

Environmental Compliance

Adhering to environmental standards, the PSMN013-100PS is compliant with RoHS directives, making it an environmentally responsible choice for designers looking to create green solutions in their electronic designs.

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Pricing & Ordering

Quantity Unit Price Ext. Price
50+ $1.2520 $62.6000
115+ $1.0268 $118.0820
175+ $0.9956 $174.2300
240+ $0.9633 $231.1920
315+ $0.9309 $293.2335
415+ $0.8351 $346.5665
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Prices are subject to market and will be confirmed after the order is placed.
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 12,000 pieces
MOQ: 50 pcs
Order Increment : 1 pcs
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