The PSMN018-80YS,115 is a high-performance, N-channel MOSFET brought to you by NXP Semiconductors, a trusted name in the industry. This power MOSFET is designed to deliver efficient power conversion with low on-state resistance and fast switching capabilities. It is a perfect choice for a wide range of applications, including but not limited to, power supplies, motor control, and general-purpose switching.
Key Features
- Low On-State Resistance: The PSMN018-80YS,115 offers an exceptionally low on-state resistance (R<sub>DS(on)), which minimizes conduction losses and improves overall efficiency.
- High Current Capability: With a continuous drain current (I<sub>D) rating of up to 33A, this MOSFET can handle high current applications with ease.
- High-Speed Switching: The device is designed for fast switching, reducing transition losses and enabling high-frequency operation.
- Robust Thermal Performance: Its excellent thermal characteristics ensure reliable operation even under high power and temperature conditions.
- Enhanced Durability: The MOSFET is encapsulated in a robust LFPAK56 package, which provides enhanced mechanical durability and reduced thermal resistance.
Applications
The versatility of the PSMN018-80YS,115 MOSFET makes it suitable for various applications, including:
- DC/DC converters
- AC/DC power supplies
- Motor drives
- Power management systems
- Automotive applications
- Switched Mode Power Supplies (SMPS)
Technical Specifications
Parameter
Value
Drain-Source Voltage (V<sub>DS)
80V
Continuous Drain Current (I<sub>D)
33A
On-State Resistance (R<sub>DS(on))
18 mΩ
Package
LFPAK56
With its impressive combination of low on-state resistance, high-current handling, and fast switching performance, the PSMN018-80YS,115 from NXP is an ideal solution for designers looking to optimize their power conversion systems.