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PSMN018-80YS,115

Part No PSMN018-80YS,115
Manufacturer NXP / Nexperia
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 80V 45A LFPAK
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Nexperia USA Inc.
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 80V
Continuous Drain Current at 25°C 45A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 1mA
Max Gate Charge 26nC @ 10V
Max Input Capacitance 1640pF @ 40V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 89W (Tc)
Maximum Rds On at Id,Vgs 18 mOhm @ 5A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package LFPAK56, Power-SO8
Dimension SC-100, SOT-669
Win Source Part Number 102511-PSMN018-80YS,115
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian PSMN018-80YS,115 CAD Model

Description

The PSMN018-80YS,115 is a high-performance, N-channel MOSFET brought to you by NXP Semiconductors, a trusted name in the industry. This power MOSFET is designed to deliver efficient power conversion with low on-state resistance and fast switching capabilities. It is a perfect choice for a wide range of applications, including but not limited to, power supplies, motor control, and general-purpose switching.

Key Features

  • Low On-State Resistance: The PSMN018-80YS,115 offers an exceptionally low on-state resistance (R<sub>DS(on)), which minimizes conduction losses and improves overall efficiency.
  • High Current Capability: With a continuous drain current (I<sub>D) rating of up to 33A, this MOSFET can handle high current applications with ease.
  • High-Speed Switching: The device is designed for fast switching, reducing transition losses and enabling high-frequency operation.
  • Robust Thermal Performance: Its excellent thermal characteristics ensure reliable operation even under high power and temperature conditions.
  • Enhanced Durability: The MOSFET is encapsulated in a robust LFPAK56 package, which provides enhanced mechanical durability and reduced thermal resistance.

Applications

The versatility of the PSMN018-80YS,115 MOSFET makes it suitable for various applications, including:

  • DC/DC converters
  • AC/DC power supplies
  • Motor drives
  • Power management systems
  • Automotive applications
  • Switched Mode Power Supplies (SMPS)

Technical Specifications

Parameter Value Drain-Source Voltage (V<sub>DS) 80V Continuous Drain Current (I<sub>D) 33A On-State Resistance (R<sub>DS(on)) 18 mΩ Package LFPAK56

With its impressive combination of low on-state resistance, high-current handling, and fast switching performance, the PSMN018-80YS,115 from NXP is an ideal solution for designers looking to optimize their power conversion systems.

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Pricing & Ordering

Quantity Unit Price Ext. Price
22+ $2.2942 $50.4724
54+ $1.8824 $101.6496
83+ $1.8236 $151.3588
114+ $1.7647 $201.1758
147+ $1.7059 $250.7673
197+ $1.5294 $301.2918
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Prices are subject to market and will be confirmed after the order is placed.
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Availability: 10,730 pieces
MOQ: 22 pcs
Order Increment : 1 pcs
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