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PSMN020-150W,127

Part No PSMN020-150W,127
Manufacturer NXP / Nexperia
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 150V 73A SOT429
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer NXP
Packaging Tube/Rail
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 150V
Continuous Drain Current at 25°C 73A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 1mA
Max Gate Charge 227nC @ 10V
Max Input Capacitance 9537pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 300W (Tc)
Maximum Rds On at Id,Vgs 20 mOhm @ 25A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package TO-247-3
Dimension TO-247-3
Win Source Part Number 1090337-PSMN020-150W,127
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian PSMN020-150W,127 CAD Model

Description

Introducing the PSMN020-150W,127 MOSFET from NXP Semiconductors

The PSMN020-150W,127 is a high-performance N-channel MOSFET designed and manufactured by NXP Semiconductors, a leader in the field of high-quality semiconductor components. This MOSFET is part of NXP's extensive range of power management products and is well-suited for a variety of applications that demand efficient power conversion and control.

Key Features

  • Low On-Resistance: The PSMN020-150W,127 boasts a very low on-state resistance (RDS(on)), which ensures minimal power loss and improves overall efficiency in applications where it is deployed.
  • High Power Handling: With a maximum continuous drain current (ID) of 80A, this MOSFET can handle significant power levels, making it ideal for high-power applications.
  • High-Temperature Performance: The device can operate effectively over a wide temperature range, ensuring reliability even under extreme conditions.
  • Robust Package: Enclosed in a TO-220 package, the PSMN020-150W,127 is designed for optimal thermal performance and durability.

Applications

The PSMN020-150W,127 is versatile and can be used in various applications including:

  • Switch Mode Power Supplies (SMPS)
  • Power converters and inverters
  • Motor drives and controllers
  • Automotive applications and DC-DC converters
  • High-efficiency computing and server power supplies

Technical Specifications

Parameter Value
Drain-Source Voltage (VDS) 150V
Continuous Drain Current (ID) 80A
Power Dissipation (PD) 214W
RDS(on) 20 mΩ
Package TO-220

Quality and Reliability

NXP Semiconductors is committed to delivering high-quality products. The PSMN020-150W,127 MOSFET is no exception and is designed to meet the stringent requirements of the most demanding applications. Customers can trust the robustness and performance of this component, which is backed by NXP's reputation for quality in the semiconductor industry.

Whether you are designing a new power system or upgrading an existing one, the PSMN020-150W,127 MOSFET from NXP Semiconductors is an excellent choice that combines performance, efficiency, and reliability.

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Pricing & Ordering

Quantity Unit Price Ext. Price
30+ $1.9589 $58.7670
75+ $1.6078 $120.5850
115+ $1.5569 $179.0435
155+ $1.5073 $233.6315
200+ $1.4565 $291.3000
270+ $1.3063 $352.7010
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Prices are subject to market and will be confirmed after the order is placed.
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 270 pieces
MOQ: 30 pcs
Order Increment : 1 pcs
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