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PSMN038-100K

Part No PSMN038-100K
Manufacturer NXP / Nexperia
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 100V SOT96-1
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Nexperia USA Inc.
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 100V
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 1mA
Max Gate Charge 43nC @ 10V
Max Input Capacitance 1740pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 3.5W (Tc)
Maximum Rds On at Id,Vgs 38 mOhm @ 5.2A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-SO
Dimension 8-SOIC (0.154", 3.90mm Width)
Win Source Part Number 210283-PSMN038-100K
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian PSMN038-100K CAD Model

Description

The PSMN038-100K from NXP Semiconductors is a high-performance, N-channel MOSFET designed to deliver efficiency and power density in a wide range of applications. With its state-of-the-art technology, the PSMN038-100K is an ideal choice for power conversion in computing, consumer electronics, and industrial systems.

Key Features

  • Low On-Resistance: The PSMN038-100K boasts an exceptionally low on-resistance (R<sub>DS(on)), which translates to reduced conduction losses and improved overall efficiency in power conversion circuits.
  • High Continuous Drain Current: With a robust continuous drain current (I<sub>D) capability, this MOSFET can handle high power levels, making it suitable for demanding applications.
  • Fast Switching Performance: Its fast switching characteristics ensure minimal switching losses, which is critical for high-frequency power supplies and converters.
  • Enhanced Thermal Performance: The PSMN038-100K is designed with an optimized package for superior thermal performance, ensuring reliability even under high-temperature operating conditions.
  • 100V Drain-Source Voltage: The device is rated for a maximum drain-source voltage (V<sub>DS) of 100V, providing a comfortable margin for a variety of high-voltage applications.

Applications

The versatility of the PSMN038-100K allows it to be used in a broad spectrum of applications, including:

  • DC/DC converters
  • AC/DC power supplies
  • Motor drives
  • Power management systems
  • LED lighting solutions
  • Automotive applications

Quality and Reliability

NXP Semiconductors is renowned for its commitment to quality and reliability. The PSMN038-100K is no exception, as it is manufactured to meet the highest industry standards. It is RoHS compliant and designed to ensure a long operational lifespan, even in the most challenging environments.

Conclusion

With its advanced features and robust performance, the PSMN038-100K N-channel MOSFET from NXP is a compelling solution for designers seeking to optimize their power management systems. Its low on-resistance, high current handling, and fast switching speeds make it a highly efficient component for a wide array of electronic applications.

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Pricing & Ordering

Quantity Unit Price Ext. Price
160+ $0.3642 $58.2720
390+ $0.2989 $116.5710
600+ $0.2896 $173.7600
825+ $0.2802 $231.1650
1,070+ $0.2709 $289.8630
1,430+ $0.2428 $347.2040
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Prices are subject to market and will be confirmed after the order is placed.
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Availability: 1,770 pieces
MOQ: 160 pcs
Order Increment : 1 pcs
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