PSMN3R2-25YLC - NXP Power MOSFET

The PSMN3R2-25YLC is a high-performance, 25V N-channel enhancement mode field-effect transistor (MOSFET) produced by NXP Semiconductors. This power MOSFET is designed to deliver efficiency and power density with a low on-state resistance (R<sub>DS(on)) and is part of NXP's extensive portfolio of MOSFETs that offer a range of voltage and power capabilities.

The device is housed in an LFPAK33 (Power-SO8) package, which is a leadless package designed for high thermal performance and reliability. The PSMN3R2-25YLC is optimized for power conversion applications and is particularly suited for DC-DC converters, motor drives, and computing applications where efficiency is key.

With its low threshold voltage and high efficiency, the PSMN3R2-25YLC is capable of handling high continuous (ID) and pulsed (IDM) currents, making it an ideal choice for demanding applications. The MOSFET also features ultra-low gate charge (Qg) which reduces switching losses, enabling high-frequency operation and further improving the efficiency of power conversion systems.

The PSMN3R2-25YLC also boasts robustness with its integrated ESD protection, ensuring the device's longevity and reliability even under stressful conditions. Its gull-wing leads provide for improved board-level reliability and easier visual inspection compared to traditional QFN packages.

Key specifications of the PSMN3R2-25YLC include:

• Drain-source voltage (V<sub>DS): 25V
• Continuous drain current (ID): 100A
• Power dissipation (P<sub>D): 110W
• Low on-state resistance (R<sub>DS(on))
• Gate charge (Qg) optimized for reduced switching losses

The PSMN3R2-25YLC is RoHS compliant and is designed to meet the environmental and regulatory requirements of the electronics industry. With its advanced features and robust package, the PSMN3R2-25YLC from NXP is a superior choice for designers looking to optimize their power management solutions.