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PSMN6R0-30YLB,115

Part No PSMN6R0-30YLB,115
Manufacturer NXP / Nexperia
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V LFPAK
Datasheet
Sample
Rohs State rohs
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Categories Discrete Semiconductor Products
Manufacturer Nexperia USA Inc.
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 71A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 1.95V @ 1mA
Max Gate Charge 19nC @ 10V
Max Input Capacitance 1088pF @ 15V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 58W (Tc)
Maximum Rds On at Id,Vgs 6.5 mOhm @ 20A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package LFPAK56, Power-SO8
Dimension SC-100, SOT-669
Win Source Part Number 136551-PSMN6R0-30YLB,115
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian PSMN6R0-30YLB,115 CAD Model

Description

Product Overview: PSMN6R0-30YLB,115 - NXP Semiconductors

The PSMN6R0-30YLB,115 is a high-performance, N-channel enhancement mode Field Effect Transistor (FET) produced by NXP Semiconductors. This power MOSFET is designed to deliver efficiency and power density in various applications, making it an ideal choice for modern high-efficiency power conversion systems.

Key Features

  • Low On-Resistance: The PSMN6R0-30YLB,115 boasts an exceptionally low on-state resistance (R<sub>DS(on)) of just 6.0 mΩ at V<sub>GS = 10 V, which minimizes conduction losses and enhances overall efficiency.
  • High Continuous Drain Current: With a high continuous drain current (I<sub>D) of 100 A, this MOSFET can handle significant power, making it suitable for demanding applications.
  • 30 V Drain-Source Voltage: The device has a maximum drain-source voltage (V<sub>DSS) of 30 V, providing a good balance between breakdown voltage and low R<sub>DS(on) for a wide range of applications.
  • Enhanced Power SO8 Package: Enclosed in an LFPAK56 (Power-SO8) package, the PSMN6R0-30YLB,115 offers a compact footprint while ensuring good thermal performance.
  • 100% Avalanche Tested: Ensuring reliability, this MOSFET is guaranteed to withstand stress under repetitive avalanche conditions.

Applications

The PSMN6R0-30YLB,115 is versatile and can be used in a variety of applications, including:

  • DC/DC converters
  • Power supplies for servers, telecom, and computing
  • Motor drives
  • Battery management systems
  • Load switches
  • Synchronous rectification

Quality and Reliability

NXP Semiconductors is known for its commitment to quality, and the PSMN6R0-30YLB,115 is no exception. It is produced to meet the highest industry standards for performance and reliability, ensuring that it can meet the needs of even the most demanding applications.

Environmental Compliance

The PSMN6R0-30YLB,115 is compliant with RoHS (Restriction of Hazardous Substances) and is lead-free, reflecting NXP's dedication to environmental sustainability and ensuring that the product can be used in green applications worldwide.

With its robust design, high efficiency, and versatility, the PSMN6R0-30YLB,115 from NXP Semiconductors is a standout choice for designers looking to optimize their power management solutions.

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Pricing & Ordering

Quantity Unit Price Ext. Price
22+ $2.3284 $51.2248
53+ $1.9105 $101.2565
82+ $1.8508 $151.7656
112+ $1.7911 $200.6032
145+ $1.7314 $251.0530
194+ $1.5523 $301.1462
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Availability: 4,050 pieces
MOQ: 22 pcs
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