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PSMN7R0-40LS,115

Part No PSMN7R0-40LS,115
Manufacturer NXP / Nexperia
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 40V QFN3333
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer NXP
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 40V
Continuous Drain Current at 25°C 40A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 1mA
Max Gate Charge 21.4nC @ 10V
Max Input Capacitance 1286pF @ 12V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 65W (Tc)
Maximum Rds On at Id,Vgs 7 mOhm @ 10A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-DFN3333 (3.3x3.3)
Dimension 8-VDFN Exposed Pad
Win Source Part Number 1090440-PSMN7R0-40LS,115
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian PSMN7R0-40LS,115 CAD Model

Description

Introducing the PSMN7R0-40LS,115 from NXP Semiconductors

The PSMN7R0-40LS,115 is a high-performance, low-threshold N-channel enhancement-mode Field-Effect Transistor (FET) designed by NXP Semiconductors, a leader in the electronics industry. This MOSFET is a part of NXP's extensive portfolio of power management solutions, engineered to cater to a wide range of applications requiring efficient power conversion and switching.

Key Features

  • Low On-State Resistance: The PSMN7R0-40LS,115 boasts a very low on-state resistance (R<sub>DS(on)) of just 7 mΩ at V<sub>GS = 10 V, which minimizes conduction losses and enhances overall efficiency.
  • High Continuous Drain Current: With a continuous drain current (I<sub>D) of 100 A, this MOSFET can handle high current applications with ease, making it ideal for power-intensive tasks.
  • Low Threshold Voltage: A low threshold voltage (V<sub>GS(th)) ensures that the device can be easily driven at lower gate voltages, simplifying the design of power management circuits.
  • Robust Thermal Performance: The PSMN7R0-40LS,115 is encapsulated in a TO-220 package, known for its excellent thermal characteristics, ensuring reliable operation even under high temperature conditions.
  • High-Speed Switching: Designed for fast switching applications, this MOSFET provides designers with the capability to design efficient power conversion systems.

Applications

The versatility of the PSMN7R0-40LS,115 MOSFET makes it suitable for a variety of applications, including:

  • DC/DC converters
  • Motor drives
  • Power supplies
  • Battery management systems
  • Automotive applications
  • Switch-mode power supplies (SMPS)

With its combination of low on-state resistance, high current capability, and fast switching performance, the PSMN7R0-40LS,115 from NXP is a reliable choice for designers looking to optimize power efficiency and thermal performance in their electronic designs. Whether you are developing power systems for consumer electronics, automotive, or industrial applications, this MOSFET is engineered to deliver top-tier performance and durability.

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