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2N5457G

Part No 2N5457G
Manufacturer ON Semiconductor
Catalog JFETs (Junction Field Effect)
Description JFETs - General Purpose N-Channel - Depletion | JFET N-CH 25V 0.31W TO92
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer ON Semiconductor
Packaging Bulk
Status Obsolete
Transistor Polarity N-Channel
Voltage - Breakdown (V(BR)GSS) 25V
Vds - Drain-Source Breakdown Voltage 25V
Current - Drain (Idss) at Vds (Vgs=0) 1mA at 15V
Voltage - Cutoff (VGS off) at Id 500mV at 10nA
Input Capacitance (Ciss) (Maximum) at Vds 7pF at 15V
Maximum Power 310mW
Temperature Range - Operating 135°C
Mounting Style Through Hole
Manufacturer Package TO-226-3, TO-92-3 (TO-226AA)
Supplier Device Package TO-92-3
Family Part Number 2N5457
Manufacturer Pack Quantity 1,000
MSL Level 1 (Unlimited)
Win Source Part Number 1123972-2N5457G
Manufacturer Homepage www.onsemi.com
Popularity Medium
Supply and Demand Status Limited
Application Field Used in Audio, Signal Processing, Communications & Networking
Ultra Librarian 3D Model Ultra Librarian 2N5457G CAD Model

Description

2N5457G - ON Semiconductor JFET

The 2N5457G is a high-performance JFET (Junction Field Effect Transistor) from ON Semiconductor, designed for a broad range of applications requiring high input impedance and low noise. This versatile N-Channel JFET is particularly well-suited for audio amplification and buffering due to its low noise and distortion characteristics.

Key Features

  • Low Noise: The 2N5457G provides a low noise figure, making it an ideal choice for audio applications and sensitive signal processing where noise minimization is crucial.
  • High Input Impedance: With its high input impedance, this JFET does not load down preceding circuits, which is beneficial for maintaining signal integrity.
  • Low Leakage Current: It exhibits minimal leakage current, enhancing the overall performance of the device in a wide range of circuits.
  • Good Frequency Response: The device offers a good frequency response, allowing for its use in RF and other high-frequency applications.

Applications

The 2N5457G is commonly used in applications such as:

  • Audio amplifiers and preamps
  • Impedance buffering
  • Analog switches
  • Chopper stabilizers
  • RF amplifiers
  • Voltage controlled resistors

Product Specifications

Parameter Value Configuration Single Channel Type N-Channel IDSS (Drain-Source Saturation Current) 1mA to 5mA VGS(off) (Gate-Source Cutoff Voltage) -0.5V to -6V PD (Power Dissipation) 310mW Package / Case TO-92

The 2N5457G JFET from ON Semiconductor is a reliable and efficient solution for designers looking to incorporate a high-impedance, low-noise transistor into their electronic designs. Its robust construction and adherence to industry standards make it a dependable choice for both prototyping and mass production.

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