The ON Semiconductor 2N6387 is a robust silicon NPN power transistor designed for high-power switching applications and amplifier circuits. This component is a part of a well-established family of power transistors that are known for their reliability and performance under challenging conditions.

Key Features

• High Collector-Emitter Voltage: The 2N6387 is capable of handling a collector-emitter voltage (VCEO) of up to 80V, making it suitable for a wide range of high voltage applications.
• High Current Handling: With a continuous collector current (IC) rating of up to 10A, this transistor can manage significant current loads, essential for power switching applications.
• High Power Dissipation: A maximum power dissipation (PD) of 150W allows the 2N6387 to withstand high power levels, which is crucial for maintaining stability and performance in power circuits.
• Complementary PNP Type Available: For applications requiring a complementary PNP transistor, ON Semiconductor offers a matching part, providing designers with flexibility in their circuit designs.

Applications

The 2N6387 is versatile and can be used in a variety of applications, including:

• Power supply regulators
• Motor controls
• Audio amplifiers
• Switching circuits
• Inverters

Quality and Reliability

ON Semiconductor is committed to delivering high-quality components. The 2N6387 is manufactured with stringent quality control processes, ensuring reliable operation and a long service life. This power transistor is a testament to ON Semiconductor's dedication to providing electronic components that meet the highest standards of performance and dependability.

Technical Specifications

For more detailed information, please refer to the 2N6387 datasheet.