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2N6517RLRA

Part No 2N6517RLRA
Manufacturer ON Semiconductor
Catalog Transistors (BJT) - Single
Description TRANS NPN 350V 0.5A TO-92
Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer ON Semiconductor
Packaging Reel package
Part Status Obsolete(EOL)
Transistor Type NPN
Current - Collector (Ic) (Maximum) 500mA
Voltage - Collector Emitter Breakdown (Maximum) 350V
Vce Saturation (Maximum) @ Ib, Ic 1V @ 5mA, 50mA
Current - Collector Cutoff (Maximum) 50nA (ICBO)
DC Current Gain (hFE) (Minimum) @ Ic, Vce 20 @ 50mA, 10V
Power - Max 625mW
Frequency - Transition 200MHz
Operating Temperature Range -55°C ~ 150°C (TJ)
Mounting Style Through Hole
Package TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Manufacturer Package TO-92-3
Win Source Part Number 762303-2N6517RLRA
Popularity Medium
Supply and Demand Status Balance
Family Name 2N6517
Introduction Date July 11, 1997
ECCN EAR99
Halogen Free Compliant
Estimated EOL Date Obsolete
Ultra Librarian 3D Model Ultra Librarian 2N6517RLRA CAD Model

Description

ON Semiconductor 2N6517RLRA High Voltage Transistor

The 2N6517RLRA by ON Semiconductor is a high-voltage bipolar junction transistor (BJT) designed for use in a variety of electronic applications that require robust performance. It is a versatile component that is ideal for commercial and industrial markets, providing a reliable solution for designers looking to manage high-voltage operations within their electronic circuits.

This NPN transistor is capable of withstanding high voltage conditions, with a collector-emitter voltage (VCEO) of 350V, making it suitable for applications such as switch mode power supplies, lighting, inverters, and other high-voltage switching applications. The 2N6517RLRA is designed to offer not only high breakdown voltage but also fast switching speeds, which is essential for efficient performance in power regulation circuits.

The 2N6517RLRA comes in a TO-92 package, which is widely used in the industry due to its compact size and ease of mounting on printed circuit boards (PCBs). This package type is recognized for its ability to offer good thermal performance, which is critical in maintaining stability and longevity of the transistor under high-voltage conditions.

Key features of the 2N6517RLRA include:

  • Collector-Emitter Voltage (VCEO): 350V
  • Collector-Base Voltage (VCBO): 350V
  • Emitter-Base Voltage (VEBO): 5V
  • Collector Current (IC): 500mA
  • Power Dissipation (PD): 625mW
  • DC Current Gain (hFE): 40 to 160
  • Package Type: TO-92

With its ability to handle high voltage and current, along with a respectable gain bandwidth product, the 2N6517RLRA is a solid choice for designers looking to create reliable and efficient circuits. Moreover, the product comes in a tape and reel packaging option, denoted by the "RLRA" suffix, which facilitates automated assembly processes and is advantageous for high-volume production.

ON Semiconductor is known for its commitment to quality, and the 2N6517RLRA is no exception. It is manufactured to meet high standards, ensuring consistent performance and durability. Whether you are working on a simple DIY project or a complex industrial system, the 2N6517RLRA high-voltage transistor is a component you can trust to perform under demanding conditions.

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Pricing & Ordering

Quantity Unit Price Ext. Price
350+ $0.1656 $57.9600
855+ $0.1358 $116.1090
1,320+ $0.1317 $173.8440
1,815+ $0.1274 $231.2310
2,350+ $0.1231 $289.2850
3,140+ $0.1104 $346.6560
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 1,590 pieces
MOQ: 350 pcs
Order Increment : 1 pcs
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