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2N6667

Part No 2N6667
Manufacturer ON Semiconductor
Catalog Transistors (BJT) - Single
Description POWER TRANSISTORS(65W) | TRANS PNP DARL 60V 10A TO220AB
Sample
Rohs State Need to verify
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer ON Semiconductor
Packaging Tube
Status Obsolete
Transistor Type PNP - Darlington
Current - Collector (Ic) (Maximum) 10A
Voltage - Collector Emitter Breakdown (Maximum) 60V
Vce Saturation (Maximum) at Ib, Ic 3V at 100mA, 10A
Current - Collector Cutoff (Maximum) 1mA
DC Current Gain (hFE) (Minimum) at Ic, Vce 1000 at 5A, 3V
Maximum Power 2W
Temperature Range - Operating -65°C ~ 150°C
Mounting Style Through Hole
Manufacturer Package TO-220-3
Supplier Device Package TO-220AB
Family Part Number 2N6667
Manufacturer Pack Quantity 50
MSL Level 1 (Unlimited)
Win Source Part Number 1124179-2N6667
Manufacturer Homepage www.mospec.com.tw
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian 2N6667 CAD Model

Description

ON Semiconductor 2N6667 Power Transistor

The ON Semiconductor 2N6667 is a high-power, high-voltage NPN bipolar junction transistor (BJT) designed to cater to a wide variety of power amplification and switching applications. This robust transistor is notable for its high current handling capabilities and fast switching speeds, making it an ideal choice for power regulation tasks in commercial, industrial, and military electronics.

Key Features:

  • Voltage and Current Ratings: The 2N6667 is capable of withstanding a collector-emitter voltage (V<sub>CEO) of up to 400V, and it can handle collector currents (I<sub>C) up to 15A, which is substantial for a wide range of high-voltage applications.
  • Power Dissipation: With a power dissipation rating of up to 175W, this transistor can manage significant amounts of power, making it well-suited for high-power circuits.
  • High Gain Bandwidth Product: It offers a transition frequency (f<sub>T) typically around 4MHz, which is indicative of its ability to handle high-frequency operations efficiently.
  • Robust Package: Enclosed in a TO-3 package, the 2N6667 ensures a reliable thermal path for heat dissipation, which is critical for maintaining stability and longevity in high-power applications.

Applications:

The ON Semiconductor 2N6667 transistor is versatile and can be used in a variety of applications, including:

  • Switching regulators
  • Motor controls
  • Inverters
  • Power amplifiers
  • Switching circuits
  • High-voltage power supplies

Quality and Reliability:

ON Semiconductor is known for its commitment to quality and reliability, and the 2N6667 is no exception. It is manufactured to meet stringent standards, ensuring reliable performance even under harsh conditions. Whether for prototyping or mass production, the 2N6667 is a solid choice for designers looking for a dependable high-power transistor.

For detailed specifications, application notes, and additional resources, engineers and purchasers can visit the ON Semiconductor website or contact their local ON Semiconductor sales representative.

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