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2N6668G

Part No 2N6668G
Manufacturer ON Semiconductor
Catalog OEM Parts (0 - 9)
Description Power 8A 80V Darlington PNP
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Mounting SMD (SMT)
Case / Package TO-220-3
Collector Base Voltage (VCBO) 80 V
Collector Emitter Voltage (VCEO) 80 V
Continuous Collector Current 10 A
Element Configuration Single
Emitter Base Voltage (VEBO) 5 V
hFE Min 1000
Lead Free Yes
Max Collector Current 10 A
Maximum Operating Temperature 150 °C
Min Operating Temperature -65 °C
Number of Pins 3
Polarity PNP
Power Dissipation 65 W
RoHS Compliant
Win Source Part Number 1036422-2N6668G
Categories OEM Parts(0-9)
Manufacturer ON Semiconductor
Popularity Low
Supply and Demand Status Shortage
Ultra Librarian 3D Model Ultra Librarian 2N6668G CAD Model

Description

Product Overview: 2N6668G from ON Semiconductor

The 2N6668G is a robust power transistor from ON Semiconductor, designed to cater to a wide array of applications that require high voltage and current capabilities. This product is a part of ON Semiconductor's extensive portfolio of semiconductor components known for their reliability and performance.

Key Features

  • High Voltage Tolerance: The 2N6668G is capable of withstanding high voltages, making it suitable for use in circuits that operate at elevated voltages.
  • High Current Rating: This transistor can handle significant current loads, which is essential for power regulation and switching applications.
  • TO-220 Package: Enclosed in a TO-220 package, the 2N6668G ensures a compact footprint while providing excellent thermal performance and ease of mounting on printed circuit boards.
  • Darlington Configuration: Featuring a Darlington pair configuration, it offers high current gain by combining two bipolar transistors. This configuration facilitates the control of high-current outputs with minimal input current.

Applications

The 2N6668G is versatile and can be employed in various applications such as:

  • Switching regulators
  • Motor controls
  • Power amplifiers
  • Solenoid and relay drivers

Specifications

Below are some of the key electrical specifications of the 2N6668G:

  • Collector-Emitter Voltage (Vceo): 100V
  • Collector Current (Ic): 15A
  • Total Power Dissipation (Pd): 100W
  • DC Current Gain (hFE): 1000 (minimum) at 3A
  • Operating and Storage Junction Temperature Range: -65 to 200°C

Quality and Reliability

ON Semiconductor is committed to the highest standards of quality and reliability, and the 2N6668G is no exception. It is constructed with robust materials and has undergone rigorous testing to ensure it meets the stringent requirements of industrial and commercial applications.

Environmental Compliance

The 2N6668G complies with environmental regulations, including RoHS (Restriction of Hazardous Substances), which restricts the use of certain hazardous materials in electronic equipment. This commitment to environmental stewardship makes it an ideal choice for eco-conscious applications.

In summary, the 2N6668G from ON Semiconductor is a powerful and reliable component that offers excellent performance for high-voltage and high-current applications. Its robust design, coupled with ON Semiconductor's reputation for quality, makes it a go-to choice for engineers and designers across various industries.

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