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2SA1209S

Part No 2SA1209S
Manufacturer ON Semiconductor
Catalog Transistors (BJT) - Single
Description SMALL SIGNAL BIPOLAR TRANSISTOR / Bipolar (BJT) Transistor
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single Bipolar Transistors
Mfr ON Semiconductor
Series *
Package Bulk
Product Status Active
Standard Package 1 pcs
MSL Level 1 (Unlimited)
REACH Status Vendor Undefined
ECCN EAR99
HTSUS 8541.29.0075
Win Source Part Number 1030217-2SA1209S
Ultra Librarian 3D Model Ultra Librarian 2SA1209S CAD Model

Description

ON Semiconductor 2SA1209S PNP Transistor

The 2SA1209S is a high-quality PNP bipolar junction transistor (BJT) developed by ON Semiconductor, a leader in energy-efficient innovations. This semiconductor device is designed for general-purpose amplification and switching applications. Its robust construction ensures reliable performance in a wide range of electronic circuits.

Key Features:

  • PNP Configuration: The 2SA1209S is a PNP transistor, which means it is turned on when a small current flows through the base in the direction opposite to the electron flow in the emitter-collector path.
  • High Current Gain: With a high current gain (hFE), this transistor can amplify weak signals, making it suitable for various amplification tasks.
  • Low Saturation Voltage: The device exhibits low saturation voltage, which enhances its efficiency by minimizing power loss when in the "on" state.
  • Complementary Pair: The 2SA1209S can be paired with its NPN counterpart, the 2SC2911S, for push-pull applications, which allows for efficient power amplification in audio and other signal processing circuits.

Applications:

The 2SA1209S is versatile and can be used in a broad spectrum of electronic devices. Some of its common applications include:

  • Audio frequency amplifiers and drivers
  • Signal processing
  • Power management circuits
  • Switching regulators
  • DC-DC converters

Technical Specifications:

Parameter Value Collector-Emitter Voltage (VCEO) -120 V Collector Current (IC) -1 A Power Dissipation (PD) 900 mW Gain Bandwidth Product (fT) 100 MHz

ON Semiconductor's commitment to quality ensures that the 2SA1209S transistor meets the requirements of the most demanding electronic designs. Whether used in audio equipment, signal processing, or power management systems, the 2SA1209S offers reliable and efficient performance.

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