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2SA1416T-TD-E

Part No 2SA1416T-TD-E
Manufacturer ON Semiconductor
Catalog Transistors (BJT) - Single
Description TRANS PNP 100V 1A SOT89-3
Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer ON Semiconductor
Packaging Reel - TR
Status Active
Transistor Polarity PNP
Maximum Current Collector 1A
VCEO Maximum Collector-Emitter Breakdown Voltage 100V
Max Vce (sat) 400mV @ 40mA, 400mA
Collector Cut-off Current(Max) 100nA (ICBO)
Typical Gain (hFE) (Min) 100 @ 100mA, 5V
Maximum Power Dissipation 500mW
Frequency - Transition 120MHz
Temperature Range - Operating 150°C (TJ)
Mounting SMD (SMT)
Case / Package PCP
Win Source Part Number 053766-2SA1416T-TD-E
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian 2SA1416T-TD-E CAD Model

Description

ON Semiconductor 2SA1416T-TD-E PNP Transistor

The ON Semiconductor 2SA1416T-TD-E is a high-performance PNP bipolar junction transistor (BJT) designed to deliver efficient current control in a wide array of electronic applications. This robust semiconductor device is well-suited for switching and amplification tasks, thanks to its fast switching speeds and high current gain characteristics.

With its compact surface-mount package, the 2SA1416T-TD-E is an ideal choice for space-constrained applications where board real estate is at a premium. The transistor is housed in a small SOT-416 (SC-75) package, which provides excellent power dissipation and thermal performance, ensuring reliable operation even under high-power conditions.

Key Features of the 2SA1416T-TD-E:

  • PNP Bipolar Junction Transistor: This device is a PNP transistor, which means it is designed to pass current from its emitter to collector when a negative voltage is applied to its base.
  • High Current Gain: The transistor exhibits a high current gain (hFE), which allows for significant amplification of the input signal, making it suitable for a range of audio and signal processing applications.
  • Low Saturation Voltage: The low V<sub>CE(sat) ensures efficient operation with minimal voltage drop across the collector-emitter terminals, leading to reduced power loss and improved efficiency.
  • Fast Switching Speeds: Designed for rapid switching, this transistor can handle high-frequency operations, which is essential for digital and communication circuits.
  • High Reliability: Manufactured by ON Semiconductor, a leader in the semiconductor industry, the 2SA1416T-TD-E is built to high-quality standards, ensuring dependable performance and longevity.
  • Surface-Mount Package: The SOT-416 (SC-75) package is optimized for surface-mount technology, facilitating easy integration into automated PCB assembly processes.

Whether you're designing power management circuits, audio amplifiers, or looking to incorporate a reliable switching component into your design, the 2SA1416T-TD-E from ON Semiconductor offers the performance and durability needed for demanding applications. Its combination of high-speed operation, low power consumption, and small form factor makes it an excellent choice for modern electronic devices.

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