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2SA1418S-TD-E

Part No 2SA1418S-TD-E
Manufacturer ON Semiconductor
Catalog Transistors (BJT) - Single
Description TRANS PNP 160V 0.7A SOT89-3
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer ON Semiconductor
Packaging Reel - TR
Status Active
Transistor Polarity PNP
Maximum Current Collector 700mA
VCEO Maximum Collector-Emitter Breakdown Voltage 160V
Max Vce (sat) 400mV @ 25mA, 250mA
Collector Cut-off Current(Max) 100nA (ICBO)
Typical Gain (hFE) (Min) 100 @ 100mA, 5V
Maximum Power Dissipation 500mW
Frequency - Transition 120MHz
Temperature Range - Operating 150°C (TJ)
Mounting SMD (SMT)
Case / Package PCP
Win Source Part Number 118859-2SA1418S-TD-E
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian 2SA1418S-TD-E CAD Model

Description

ON Semiconductor 2SA1418S-TD-E PNP Transistor

The 2SA1418S-TD-E from ON Semiconductor is a high-performance PNP bipolar junction transistor (BJT) designed for use in a variety of electronic applications. This device offers excellent power handling capabilities and is well-suited for switching and amplification purposes. The transistor is housed in a compact SOT-89 package, which is ideal for space-constrained applications while providing good thermal performance.

Key Features

  • Low V<sub>CE(sat): The transistor offers low collector-emitter saturation voltage, which results in reduced power loss and improved efficiency in operation.
  • High Current Capacity: With a continuous collector current rating of up to 1 A, the 2SA1418S-TD-E can handle significant current, making it suitable for power amplification and control in circuits.
  • Complementary NPN Type Available: For applications requiring complementary push-pull configurations, there is a complementary NPN type transistor available, which allows for easy design and implementation of efficient push-pull stages.
  • High Power Dissipation: The device is capable of dissipating up to 1 W of power, ensuring reliable operation under high-load conditions.
  • High-Speed Switching: The 2SA1418S-TD-E is designed for high-speed switching applications, providing rapid transition between on and off states.

Applications

The versatility of the 2SA1418S-TD-E makes it suitable for a wide range of applications. It is commonly used in:

  • Power management circuits
  • DC/DC converters
  • Motor control circuits
  • Audio amplifiers
  • Signal processing
  • General-purpose switching and amplification

Product Specifications

The key specifications of the 2SA1418S-TD-E include a collector-base voltage (VCBO) of -50 V, a collector-emitter voltage (VCEO) of -50 V, and an emitter-base voltage (VEBO) of -5 V. The device operates within a junction temperature range of -55°C to +150°C, making it reliable in various environmental conditions.

For designers and engineers looking for a robust PNP transistor with high current handling and low saturation voltage, the ON Semiconductor 2SA1418S-TD-E is an excellent choice that ensures performance and reliability in their electronic designs.

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Pricing & Ordering

Quantity Unit Price Ext. Price
175+ $0.3323 $58.1525
425+ $0.2727 $115.8975
660+ $0.2642 $174.3720
905+ $0.2557 $231.4085
1,170+ $0.2472 $289.2240
1,565+ $0.2215 $346.6475
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 2,000 pieces
MOQ: 175 pcs
Order Increment : 1 pcs
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