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2SB1203T-TL-E

Part No 2SB1203T-TL-E
Manufacturer ON Semiconductor
Catalog Transistors (BJT) - Single
Description TRANS PNP 50V 5A TP-FA
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer ON Semiconductor
Packaging Reel - TR
Status Active
Transistor Polarity PNP
Maximum Current Collector 5A
VCEO Maximum Collector-Emitter Breakdown Voltage 50V
Max Vce (sat) 550mV @ 150mA, 3A
Collector Cut-off Current(Max) 1μA (ICBO)
Typical Gain (hFE) (Min) 200 @ 500mA, 2V
Maximum Power Dissipation 1W
Frequency - Transition 130MHz
Temperature Range - Operating 150°C (TJ)
Mounting SMD (SMT)
Case / Package 2-TP-FA
Win Source Part Number 104815-2SB1203T-TL-E
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian 2SB1203T-TL-E CAD Model

Description

ON Semiconductor 2SB1203T-TL-E PNP Transistor

The ON Semiconductor 2SB1203T-TL-E is a high-performance PNP bipolar junction transistor (BJT) designed for use in a wide range of electronic applications. This versatile semiconductor device is well-suited for power management tasks, including switching and amplification functions in consumer, industrial, and automotive electronics. Its robust design ensures reliable operation even under challenging conditions.

Key Features

  • High Current Capability: The 2SB1203T-TL-E supports continuous collector currents up to -3 A, making it suitable for driving high-current loads.
  • Low V<sub>CE(sat): It offers a low collector-emitter saturation voltage, which translates to reduced power loss and improved efficiency during operation.
  • High Power Dissipation: With a power dissipation rating of 2 W, this transistor can handle significant power levels, which is beneficial for power-intensive applications.
  • Complementary Design: It is designed to complement the NPN type 2SD1760T-TL-E, providing designers with a balanced solution for push-pull configurations.
  • Compact Package: Enclosed in a small surface-mount package (TP-FA), the 2SB1203T-TL-E is ideal for space-constrained applications.

Applications

The 2SB1203T-TL-E transistor is suitable for a variety of applications, including:

  • Power supply circuits
  • Motor control circuits
  • Audio amplifiers
  • Signal processing
  • DC-DC converters
  • Automotive electronic systems

Electrical Characteristics

The device features an impressive set of electrical characteristics that ensure its adaptability and performance in various circuits:

  • Collector-base voltage (VCBO): -50 V
  • Collector-emitter voltage (VCEO): -50 V
  • Emitter-base voltage (VEBO): -5 V
  • Collector current (IC): -3 A
  • Collector power dissipation (PC): 2 W

ON Semiconductor's commitment to quality and performance is evident in the 2SB1203T-TL-E transistor. Its combination of high current capability, low saturation voltage, and high power dissipation makes it an excellent choice for designers looking to optimize their electronic designs for performance and reliability.

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Pricing & Ordering

Quantity Unit Price Ext. Price
35+ $1.6553 $57.9355
90+ $1.3583 $122.2470
135+ $1.3159 $177.6465
185+ $1.2734 $235.5790
235+ $1.2310 $289.2850
315+ $1.1036 $347.6340
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 11,900 pieces
MOQ: 35 pcs
Order Increment : 1 pcs
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